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參數(shù)資料
| 型號： | SGW6N60UFD |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Ultra-Fast IGBT |
| 中文描述： | 6 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 569K |
| 代理商： | SGW6N60UFD |
SGW6N60UFD Rev. A1
S
2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT
T
C
= 25
°
C unless otherwise noted
Electrical Characteristics of DIODE
T
C
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage
B
VCES
/
T
J
Voltage
I
CES
Collector Cut-Off Current
I
GES
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
600
--
--
V
Temperature Coefficient of Breakdown
V
GE
= 0V, I
C
= 1mA
--
0.6
--
V/
°
C
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
--
--
--
--
250
± 100
uA
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 3mA, V
CE
= V
GE
I
C
= 3A
,
V
GE
= 15V
I
C
= 6A
,
V
GE
= 15V
3.5
--
--
4.5
2.1
2.6
6.5
2.6
--
V
V
V
V
CE(sat)
Dynamic Characteristics
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
220
22
7
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn
-
On Switching Loss
E
off
Turn
-
Off Switching Loss
E
ts
Total Switching Loss
Q
g
Total Gate Charge
Q
ge
Gate-Emitter Charge
Q
gc
Gate-Collector Charge
L
e
Internal Emitter Inductance
V
CC
= 300 V, I
C
= 3A,
R
G
= 80
, V
GE
= 15V,
Inductive Load, T
C
= 25
°
C
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
15
25
60
70
57
25
82
22
32
80
122
65
46
111
15
5
4
7.5
--
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
nH
130
150
--
--
120
--
--
200
300
--
--
170
22
8
6
--
V
CC
= 300 V, I
C
= 3A,
R
G
= 80
, V
GE
= 15V
,
Inductive Load, T
C
= 125
°
C
V
CE
= 300 V, I
C
= 3A,
V
GE
= 15V
Measured 5mm from PKG
Symbol
Parameter
Test Conditions
Min.
--
--
--
--
--
--
--
--
Typ.
1.4
1.3
35
53
3.5
4.5
60
120
Max.
1.7
--
52
--
5.0
--
135
--
Units
V
FM
Diode Forward Voltage
I
F
= 4A
T
C
= 25
°
C
T
C
= 100
°
C
T
C
= 25
°
C
T
C
= 100
°
C
T
C
= 25
°
C
T
C
= 100
°
C
T
C
= 25
°
C
T
C
= 100
°
C
V
t
rr
Diode Reverse Recovery Time
I
F
= 4A,
di/dt = 200A/us
ns
I
rr
Diode Peak Reverse Recovery
Current
A
Q
rr
Diode Reverse Recovery Charge
nC
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