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參數(shù)資料
| 型號(hào)： | SGW5N60RUF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Short Circuit Rated IGBT(額定短路電流絕緣柵雙極晶體管) |
| 中文描述： | 8 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 585K |
| 代理商： | SGW5N60RUF |
2000 Fairchild Semiconductor International
SGW5N60RUF Rev. A
S
Electrical Characteristics of IGBT
T
C
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage
B
VCES
/
T
J
Voltage
I
CES
Collector Cut-Off Current
I
GES
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
600
--
--
V
Temperature Coeff. of Breakdown
V
GE
= 0V, I
C
= 1mA
--
0.6
--
V/
°
C
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
--
--
--
--
250
± 100
uA
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 5mA, V
CE
= V
GE
I
C
= 5A
,
V
GE
= 15V
I
C
= 8A
,
V
GE
= 15V
5.0
--
--
6.0
2.2
2.5
8.5
2.8
--
V
V
V
V
CE(sat)
Dynamic Characteristics
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
354
67
14
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
V
CC
= 300 V, I
C
= 5A,
R
G
= 40
, V
GE
= 15V,
Inductive Load, T
C
= 25
°
C
--
--
--
--
--
--
--
--
--
--
--
--
--
--
13
24
34
136
88
107
195
13
26
40
250
103
220
323
--
--
50
200
--
--
280
--
--
60
350
--
--
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
V
CC
= 300 V, I
C
= 5A,
R
G
= 40
, V
GE
= 15V,
Inductive Load, T
C
= 125
°
C
T
sc
Short Circuit Withstand Time
V
CC
= 300 V, V
GE
= 15V
@
T
C
= 100
°
C
10
--
--
us
Q
g
Q
ge
Q
gc
L
e
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
V
CE
= 300 V, I
C
= 5A,
V
GE
= 15V
--
--
--
--
16
3
7
7.5
24
6
14
--
nC
nC
nC
nH
Measured 5mm from PKG
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| SGW5N60RUFD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT |
| SGW5N60RUFDTM | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGW5N60RUFTM | 功能描述:IGBT 晶體管 600V/5A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGW6N60UF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
| SGW6N60UFD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
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