參數(shù)資料
型號(hào)： SGT2900SCT
廠商： Littelfuse, Inc.
元件分類： TVS-瞬態(tài)抑制二極管
英文描述： Silicon Protection Circuits - Surface Mount SurgectorTM Transient Voltage Suppressors
中文描述： 硅保護(hù)電路-表面貼裝SurgectorTM瞬態(tài)電壓抑制器
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 176K
代理商： SGT2900SCT
Surgector Thyristors For Telecom Protection
Silicon Protection Circuits
Surface Mount Surgector
TM
Transient Voltage Suppressors
237
www.littelfuse.com
5
S
C
Absolute Maximum Ratings
Continuous Reverse Voltage, VDRM............................58V to 300V
Transient Peak Surge Current, IPP
8 x 20μs
10 x 160μs
10 x 560μs
10 x 1000μs
Critical Rate of Rise of Voltage, dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V/μs
B Types C Types
200A
150A
100A
50A
Operating Conditions
Temperature Range, (TA). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40
o
C to 85
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device.This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θ
JAis measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
TC= 25
o
C, Unless Otherwise Specified
Thermal Information
Thermal Resistance (Typical, Note 1)
θ
JA(
o
C/W)
J-Bend Package
C Types. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
B Type.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Maximum Storage Temperature Range.....................- 65
o
C to 150
o
C
Maximum Junction Temperature (Plastic Package).....................150
o
C
Maximum Lead Temperature (Soldering 5s).......................... .300
o
C
NOTES:
2. dv/dt = 100V/
μ
s.
3. Double exponential current waveform.
4. One half cycle, 50 to 60Hz sine, non repetitive.
MODEL NUMBER
B TYPES
SGT0640SBT
SGT0720SBT
SGT2300SBT
SGT2900SBT
SGT3100SBT
C TYPES
SGT0640SCT
SGT0720SCT
SGT1300SCT
SGT1500SCT
V
DRM
(MAX)
V
I
DRM
(MAX)
AT V
DRM
μ
A
V
T
(MAX)
AT 2 A
V
(NOTE 2)
V
V
BO
(MAX)
AT I
BO
= 800mA
I
H
(MIN)
mA
(NOTE 3)
A
I
PP
(MAX) FOR 10
x 1000
μ
s PULSE
(NOTE 4)
A
I
TSM
C
O
(Typ)
AT 1MHz /
1V
RMS, DC
pF
58
63
190
250
275
5
5
5
5
5
5
5
5
5
5
77
88
260
330
350
150
150
150
150
150
50
50
50
50
50
25
25
25
25
25
80
80
30
30
30
58
63
120
140
190
250
275
300
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
77
88
160
190
260
330
350
400
150
150
150
150
150
150
150
150
100
100
100
100
100
100
100
100
65
65
65
65
65
65
65
65
280
280
150
150
100
70
70
55
SGT2300SCT
SGT2900SCT
SGT3100SCT
SGT3500SCT
FIGURE 1. V-I CHARACTERISTICS
I
T
I
H
I
DRM
V
T
V
DRM
V
BO
I
BO
FIGURE 2. PEAK PULSE CURRENT TEST WAVEFORM
100
90
50
10
O
1
T
T
1
T
2
TIME
P
O
= Virtual Origin of Wave
T = Time From 10% to 90% of Peak
T
1
= Virtual Front Time = 1.25
t
T
2
= Virtual Time to Half Value (Impulse Duration)
Example: For an 8/20
μ
s Current Waveform:
8
μ
s = T
1
= Virtual Front Time
20
μ
s = T
2
= Virtual Time to Half Value
400A
200A
150A
100A
Next
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