參數(shù)資料
型號： SGP10N60A
廠商： INFINEON TECHNOLOGIES AG
英文描述： Fast IGBT in NPT-technology
中文描述： 在不擴散核武器條約快速IGBT技術(shù)
文件頁數(shù)： 3/12頁
文件大小： 401K
代理商： SGP10N60A
SGP10N60A, SGB10N60A
SGW10N60A
3
Jul-02
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
28
12
178
24
0.15
0.17
0.320
34
15
214
29
0.173
0.221
0.394
ns
T
j
=25
°
C,
V
CC
=400V,
I
C
=10A,
V
GE
=0/15V,
R
G
=25
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=180nH,
1)
=55pF
mJ
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
28
12
198
26
0.260
0.280
0.540
34
15
238
32
0.299
0.364
0.663
ns
T
j
=150
°
C
V
CC
=400V,
I
C
=10A,
V
GE
=0/15V,
R
G
=25
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=180nH,
1)
=55pF
mJ
1)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
相關(guān)PDF資料
PDF描述
SGW10N60A Fast IGBT in NPT-technology
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SGB20N60 Fast S-IGBT in NPT-technology
SGP20N60 Fast S-IGBT in NPT-technology
SGP20N60 Short Circuit Rated IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SGP10N60A_09 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
SGP10N60AXKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 20A 92W TO220-3
SGP10N60RUF 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT
SGP10N60RUFD 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT
SGP10N60RUFDTU 功能描述:IGBT 晶體管 Dis Short Circuit Rated IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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