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參數(shù)資料
| 型號： | SGP100 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Primary-side-control PWM Controller |
| 中文描述： | 一次側(cè)控制PWM控制器 |
| 文件頁數(shù)： | 11/14頁 |
| 文件大小： | 501K |
| 代理商： | SGP100 |
Product Specification
Primary-side-control PWM Controller
SGP100
System General Corp.
Version 1.1.1 (IAO33.0042.B1)
- 11 -
www.sg.com.tw www.fairchildsemi.com
September 26, 2007
Temperature Compensation
The SGP100 has built-in temperature compensation
circuitry to provide constant reliable voltage regulation at
differing ambient temperatures. This internal positive
temperature coefficient (PTC) compensation current is
used to compensate for the temperature due to the
forward-voltage drop of the diode output. The internal
PTC current passes through the external resistor (R
1
). The
value of R
1
determines the temperature compensation
amount. The suggested value for R
1
is 10~20K
Ω
with a
+/-1% tolerance value.
Auxiliary
Winding
Vs
10k~20k 1%
Temperature
Compensation
PTC
SGP100
R1
+
V
1
R
Figure 4. Temperature Compensation
Leading-Edge Blanking
Each time the power MOSFET is switched on, a turn-on
spike occurs at the sense resistor. To avoid premature
termination of the switching pulse, a 150ns leading-edge
blanking time is built in. Conventional RC filtering can
therefore be omitted. During this blanking period, the
current-limit comparator is disabled and cannot switch off
the gate driver.
Under-Voltage Lockout (UVLO)
The turn-on and turn-off thresholds are fixed internally at
16V/6.75V. During start-up, the hold-up capacitor must
be charged to 16V through the start-up resistor, so that the
SGP100 is enabled. The hold-up capacitor continues to
supply V
DD
until power can be delivered from the
auxiliary winding of the main transformer. V
DD
must not
drop below 6.75V during this start-up process. This
UVLO hysteresis window ensures that hold-up capacitor
is adequate to supply V
DD
during start-up.
V
DD
Over-Voltage Protection
V
DD
over-voltage protection prevents damage due to
over-voltage conditions. When the voltage V
DD
exceeds
28V due to abnormal conditions, PWM output is latched
off. Over-voltage conditions are usually caused by open
feedback loops.
Over-Temperature Protection (OTP)
The SGP100 has a built-in temperature sensing circuit to
shut down the PWM output then enters latch mode once
the junction temperature exceeds 150°C. When the PWM
output shuts down, the V
DD
voltage gradually drops to the
UVLO voltage. The PWM controller does not release
latch mode until the AC is unplugged.
Gate Output
The SGP100 BiCMOS output stage is a fast totem pole
gate driver. Cross conduction is avoided to minimize heat
dissipation, increase efficiency, and enhance reliability.
The output driver is clamped by an internal 18V
Zener
diode to protect power MOSFET transistors from
undesired over-voltage gate signals.
Built-in Slope Compensation
The sensed voltage across the current-sense resistor is
used for current mode control and pulse-by-pulse current
limiting. Built-in slope compensation improves stability
and prevent sub-harmonic oscillations due to peak-current
mode control. The SGP100 has a synchronized,
positively-sloped ramp built-in at each switching cycle.
Noise Immunity
Noise from the current sense or the control signal can
cause significant pulse width jitter. While slope
compensation helps alleviate these problems, further
precautions should still be taken. Good placement and
layout practices should be followed. Avoiding long PCB
traces and component leads, locating compensation and
filter components near the SGP100, and increasing the
power MOS gate resistance improves performance.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SGP100SZ | 功能描述:開關(guān)變換器、穩(wěn)壓器與控制器 Primary-side-control PWM controller RoHS:否 制造商:Texas Instruments 輸出電壓:1.2 V to 10 V 輸出電流:300 mA 輸出功率: 輸入電壓:3 V to 17 V 開關(guān)頻率:1 MHz 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:WSON-8 封裝:Reel |
| SGP101SZ | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| SGP10N60 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 10A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGP10N60 | 制造商:Infineon Technologies AG 功能描述:IGBT TO-220 |
| SGP10N60A | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 10A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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