參數(shù)資料
型號(hào)： SGP02N60
廠商： INFINEON TECHNOLOGIES AG
英文描述： FAST IGBT IN NPT TECHNOLOGY
中文描述： 快速IGBT技術(shù)在不擴(kuò)散核武器條約
文件頁數(shù)： 7/13頁
文件大?。?/td> 389K
代理商： SGP02N60
Preliminary
SGP02N120
SGB02N120, SGD02N120
Power Semiconductors
7
Mar-00
E
,
S
0A
2A
4A
6A
8A
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
E
on
*
E
off
E
ts
*
E
,
S
0
50
R
G
,
GATE RESISTOR
100
150
0.0mJ
0.1mJ
0.2mJ
0.3mJ
0.4mJ
0.5mJ
E
ts
*
E
on
*
E
off
I
C
,
COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
j
= 150
°
C,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 91
)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 2A)
E
,
S
-50°C
0°C
50°C
100°C
150°C
0.0mJ
0.1mJ
0.2mJ
0.3mJ
0.4mJ
E
ts
*
E
on
*
E
off
Z
t
,
T
1μs
10μs
100μs
t
p
,
PULSE WIDTH
1ms
10ms 100ms
1s
10
-2
K/W
10
-1
K/W
10
0
K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D
=0.5
T
j
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 2A,
R
G
= 91
)
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(
D
=
t
p
/
T
)
*)
E
and
E
include losses
due to diode recovery.
*)
E
and
E
include losses
due to diode recovery.
*)
E
on
and
E
ts
include losses
due to diode recovery.
C
1
=
τ
1
/
R
1
R
1
R
2
C
2
=
τ
2
/
R
2
R
,(K/W )
0.66735
0.70472
0.62778
τ
,
(s)
=
0.04691
0.00388
0.00041
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