參數(shù)資料
型號: SGM2014AM
廠商: Sony Corporation
英文描述: GaAs N-channel Dual Gate MES FET
中文描述: 砷化鎵N溝道雙柵場效應(yīng)晶體管
文件頁數(shù): 2/5頁
文件大?。?/td> 51K
代理商: SGM2014AM
– 2 –
SGM2014AM
0
1
V
DS
– Drain to source voltage [V]
2
3
4
5
6
0
10
20
30
40
I
D
I
D
vs. V
DS
(V
G2S
= 1.5V)
V
G1S
= 0V
–0.3V
–0.6V
–0.9V
–1.2V
–1.5V
–2.0
–1.5
–1.0
–0.5
0
0
10
15
20
25
V
G1S
– Gate 1 to source voltage [V]
I
D
I
D
vs. V
G1S
(V
DS
= 5V)
V
G2S
= 1.5V
1.0V
0.5V
0V
–0.5V
–1.5V
5
–1.0V
Typical Characteristics
(Ta = 25°C)
Electrical Characteristics
(Ta = 25°C)
Item
Drain cut-off current
Gate 1 to source current
Gate 2 to source current
Drain saturation current
Gate 1 to source cut-off voltage
Gate 2 to source cut-off voltage
Forward transfer admittance
Input capacitance
Feedback capacitance
Noise figure
Associated gain
I
DSX
I
G1SS
I
G2SS
I
DSS
V
G1S
(OFF)
V
G2S
(OFF)
gm
Ciss
Crss
NF
Ga
V
DS
= 12V
V
G1S
= –4V
V
G2S
= 0V
V
G1S
= –4.5V
V
G2S
= 0V
V
DS
= 0V
V
G2S
= –4.5V
V
G1S
= 0V
V
DS
= 0V
V
DS
= 5V
V
G1S
= 0V
V
G2S
= 0V
V
DS
= 5V
I
D
= 100μA
V
G2S
= 0V
V
DS
= 5V
I
D
= 100μA
V
G1S
= 0V
V
DS
= 5V
I
D
= 10mA
V
G2S
=1.5V
f = 1kHz
V
DS
= 5V
I
D
= 10mA
V
G2S
= 1.5V
f = 1MHz
V
DS
= 5V
I
D
= 10mA
V
G2S
= 1.5V
f = 900MHz
8
13
15
17
0.9
25
1.5
18
50
–8
–8
28
–2.5
–2.5
2
50
2.5
μA
μA
μA
mA
V
V
ms
pF
fF
dB
dB
Symbol
Condition
Min.
Typ.
Max.
unit
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