參數(shù)資料
型號(hào): SGL41-40
廠商: VISHAY SEMICONDUCTORS
元件分類: 二極管(射頻、小信號(hào)、開關(guān)、功率)
英文描述: 1 A, 40 V, SILICON, SIGNAL DIODE, DO-213AB
封裝: PLASTIC, MELF-2
文件頁數(shù): 2/4頁
文件大?。?/td> 181K
代理商: SGL41-40
www.vishay.com
2
Document Number 88548
14-Jul-05
BYM13-20 thru BYM13-60, SGL41-20 thru SGL41-60
Vishay General Semiconductor
Electrical Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
Thermal Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) Thermal resistance junction to terminal, 0.24 x 0.24" (6.0 x 6.0 mm) copper pads to each terminal
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise specified)
Parameter
Test condition
Symbol
BYM13-
20
BYM13-
30
BYM13-
40
BYM13-
50
BYM13-
60
Unit
SGL41-20 SGL41-30 SGL41-40 SGL41-50 SGL41-60
Maximum
instantaneous forward
voltage
at 1.0 A(1)
VF
0.50
0.70
V
Maximum reverse
current at rated DC
blocking voltage(1)
TA = 25 °C
TA = 100 °C
IR
0.5
mA
10
5.0
Typical junction
capacitance
at 4.0 V, 1.0 MHz
CJ
110
80
pF
Parameter
Symbol
BYM13-
20
BYM13-
30
BYM13-
40
BYM13-
50
BYM13-
60
Unit
SGL41-20 SGL41-30 SGL41-40 SGL41-50 SGL41-60
Maximum thermal resistance
RθJA
RθJT
75(1)
30(1)
°C/W
Figure 1. Forward Current Derating Curve
Terminal Temperature ( °C)
A
verage
Forward
Current
(A)
0
25
50
75
100
125
150
175
0
0.25
0.50
0.75
1.0
SGL41-20 - SGL41-40
Resistive or
Inductive Load
SGL41-50 & SGL41-60
P.C.B. Mounted
on 0.24 x 0.24"
(6.0 x 6.0mm)
Copper Land
Areas
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Number of Cycles at 60 HZ
Peak
Forward
Surge
Current
(A)
1
100
5.0
10
15
20
25
30
10
At Rated Td
8.3ms Single Half Sine-Wave
相關(guān)PDF資料
PDF描述
SGL41-20-HE3 1 A, 20 V, SILICON, SIGNAL DIODE, DO-213AB
SGL41-30-E3 1 A, 30 V, SILICON, SIGNAL DIODE, DO-213AB
SGL41-60/51 1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB
SGL41-60-HE3 1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB
SGL41-30 1 A, 30 V, SILICON, SIGNAL DIODE, DO-213AB
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