參數(shù)資料
型號： SGL25N120RUF
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： Ceramic Multilayer Capacitor; Capacitance:4700pF; Capacitance Tolerance:+50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:W2F; Features:Feedthru; Leaded Process Compatible:Yes
中文描述： 40 A, 1200 V, N-CHANNEL IGBT, TO-264
封裝： TO-264, 3 PIN
文件頁數(shù)： 5/8頁
文件大?。?/td> 568K
代理商： SGL25N120RUF
SGL25N120RUFD Rev. B
S
2002 Fairchild Semiconductor Corporation
Fig 14. Gate Charge Characteristics
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA
Fig 17. Transient Thermal Impedance of IGBT
Fig 13. Switching Loss vs. Collector Current
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1E-3
0.01
0.1
1
10
0.1
0.5
0.2
0.05
0.02
0.01
single pulse
T
Rectangular Pulse Duration [sec]
1
10
100
1000
1
10
100
Safe Operating Area
V
GE
= 20V, T
C
= 100
℃
C
C
Collector - Emitter Voltage, V
CE
[V]
15
25
35
45
55
1000
Common Emitter
V
GE
=
±
15V, R
G
= 10
T
C
= 25
℃
T
C
= 125
℃
Eon
Eoff
Eon
Eoff
S
μ
J
Collector Current, I
C
[A]
0
20
40
60
80
100
120
0
2
4
6
8
10
12
14
16
Common Emitter
R
L
= 24
T
C
= 25
℃
600V
400V
V
CC
= 200V
G
G
Gate Charge, Q
g
[nC]
0.1
1
10
100
1000
0.01
0.1
1
10
100
Single Nonrepetitive
Pulse T
= 25
℃
Curves must be derated
linearly with increase
in temperature
50
μ
s
100
μ
s
1ms
DC Operation
I
C
MAX. (Pulsed)
I
C
MAX. (Continuous)
C
C
Collector - Emitter Voltage, V
CE
[V]
Pdm
t1
t2
Duty factor D = t1 / t2
×
Zthjc + T
C
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SGL50N60RUF Ceramic Multilayer Capacitor; Capacitance:4700pF; Capacitance Tolerance:+50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:W2F; Leaded Process Compatible:Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SGL25N120RUFD 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT
SGL25N120RUFDTU 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGL25N120RUFTU 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGL34 制造商:DIOTEC 制造商全稱:Diotec Semiconductor 功能描述:Surface Mount Schottky-Rectifiers
SGL34-03-LFR 制造商:FRONTIER 制造商全稱:Frontier Electronics. 功能描述:0.8A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
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