參數(shù)資料
型號(hào)： SGL15N60RUFD
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： CO-PAK IGBT(CO-PAK絕緣柵雙極晶體管(IGBT))
中文描述： 24 A, 600 V, N-CHANNEL IGBT, TO-264AA
封裝： TO-264, 3 PIN
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 300K
代理商： SGL15N60RUFD
Characteristics
C - E Breakdown Voltage
Temperature Coeff. of
Breakdown Voltage
G - E threshold voltage
Collector cutoff Current
G - E leakage Current
Collector to Emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Turn on rise time
Turn off delay time
Turn off fall time
Turn on Switching Loss
Turn off Switching Loss
Total Switching Loss
Short Circuit withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Symbol
BV
CES
V
CES/
T
J
V
GE(th)
I
CES
I
GES
V
CE
(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tsc
Qg
Qge
Qgc
Min
600
-
5.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
-
-
-
Typ
-
0.6
6.0
-
-
2.0
2.4
937
157
36
70
20
60
70
0.1
0.3
0.4
-
64
15
21
Max
-
-
8.0
250
100
2.7
-
-
-
-
-
-
90
140
-
-
0.7
-
96
22
31
Units
V
V/
°
C
V
uA
nA
V
V
pF
pF
pF
nS
nS
nS
nS
mJ
mJ
mJ
uS
nC
nC
nC
ELECTRICAL CHARACTERISTICS (IGBT PART)
(T
c
=25
°
C,Unless Otherwise Specified)
Test Conditions
V
GE
= 0V , I
C
= 250uA
V
GE
= 0V , I
C
= 1mA
I
C
=15mA , V
CE
= V
GE
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
Ic=15A, V
GE
= 15V
Ic=24A, V
GE
= 15V
V
GE
= 0V , f = 1MHz
V
CE
= 30V
V
CC
= 300V , I
C
= 15A
V
GE
= 15V
R
G
= 13
Inductive Load
Vcc = 300V, V
GE
= 15V
@Tc = 100
°
C
Vcc = 300V
V
GE
= 15V
Ic = 15A
CO-PAK IGBT
SGL15N60RUFD
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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SGL160N60UFDTU 功能描述:IGBT 晶體管 Dis High Perf IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGL160N60UFDTU 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT ULTRAFAST 600V 160A TO-264 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT, ULTRAFAST, 600V, 160A, TO-264
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