參數(shù)資料
型號: SGH30N60RUFD
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: Short Circuit Rated IGBT(短路電流額定的絕緣柵雙極晶體管(IGBT))
中文描述: 48 A, 600 V, N-CHANNEL IGBT
封裝: TO-3P, 3 PIN
文件頁數(shù): 3/7頁
文件大?。?/td> 659K
代理商: SGH30N60RUFD
2000 Fairchild Semiconductor International
SGH30N60RUFD Rev. A
S
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Saturation Voltage vs. V
GE
0
2
4
6
8
0
10
20
30
40
50
60
70
80
90
20V
12V
15V
V
GE
= 10V
Common Emitter
T
C
= 25
C
C
Collector - Emitter Voltage, V
CE
[V]
1
10
0
10
20
30
40
50
60
70
80
90
Common Emitter
V
GE
= 15V
T
C
= 25
━━
T
C
= 125
------
C
C
Collector - Emitter Voltage, V
CE
[V]
-50
0
50
100
150
0
1
2
3
4
5
30A
60A
45A
I
C
= 15A
Common Emitter
V
GE
= 15V
C
C
Case Temperature, T
C
[
]
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 25
60A
30A
I
C
= 15A
C
C
Gate - Emitter Voltage, V
GE
[V]
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 125
60A
30A
I
C
= 15A
C
C
Gate - Emitter Voltage, V
GE
[V]
0
5
10
15
20
25
30
35
40
0.1
1
10
100
1000
Duty cycle : 50%
T
= 100
Power Dissipation = 45W
V
= 300V
Load Current : peak of square wave
Frequency [KHz]
L
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