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參數(shù)資料
| 型號(hào)： | SGH30N60RUF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Ceramic Multilayer Capacitor; Capacitance:2200pF; Capacitance Tolerance:+50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:W2F; Features:Feedthru; Leaded Process Compatible:Yes |
| 中文描述： | 48 A, 600 V, N-CHANNEL IGBT |
| 封裝： | TO-3P, 3 PIN |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 565K |
| 代理商： | SGH30N60RUF |
SGH30N60RUF Rev. A1
S
2002 Fairchild Semiconductor Corporation
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Saturation Voltage vs. V
GE
0
2
4
6
8
0
10
20
30
40
50
60
70
80
90
20V
12V
15V
V
GE
= 10V
Common Emitter
T
C
= 25
℃
C
C
Collector - Emitter Voltage, V
CE
[V]
1
10
0
10
20
30
40
50
60
70
80
90
Common Emitter
V
GE
= 15V
T
C
= 25
℃
━━
T
C
= 125
℃
------
C
C
Collector - Emitter Voltage, V
CE
[V]
-50
0
50
100
150
0
1
2
3
4
5
30A
60A
45A
I
C
= 15A
Common Emitter
V
GE
= 15V
C
C
Case Temperature, T
C
[
℃
]
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 25
℃
60A
30A
I
C
= 15A
C
C
Gate - Emitter Voltage, V
GE
[V]
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 125
℃
60A
30A
I
C
= 15A
C
C
Gate - Emitter Voltage, V
GE
[V]
0
5
10
15
20
25
30
35
40
0.1
1
10
100
1000
Duty cycle : 50%
T
= 100
℃
Power Dissipation = 45W
V
= 300V
Load Current : peak of square wave
Frequency [KHz]
L
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| SGH30N60RUFD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT |
| SGH30N60RUFDTU | 功能描述:IGBT 晶體管 Dis Short Circuit Rated IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGH30N60RUFTU | 功能描述:IGBT 晶體管 Dis Short Circuit Rated IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGH40N60 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
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