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參數(shù)資料
| 型號： | SGF9 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | For C to X-band Local Oscillator and Amplifier |
| 中文描述： | 對于C的X波段本地振蕩器和放大器 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 66K |
| 代理商： | SGF9 |
SGF9
No.0000-1/8
Features
Mold package-owing to the cross-mold technology,
this product can maintain the same performance as
the ceramic package.
The chip surface is covered
with the highly reliable protection film.
Automatic surface mounting is available.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN*0000
SGF9
Package Dimensions
unit : mm
0000
[SGF9]
40901 TS IM hirata
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel GaAs MESFET
For C to X-band Local Oscillator and Amplifier
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDS
VGS
ID
PD
Tj
Tstg
Conditions
Ratings
Unit
V
V
mA
mW
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
6.0
--5.0
100
130
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
--5.0
max
Unit
Gate-to-Source Leak Current
Saturated Drain Current
Gate-to-Source Cutoff Voltage
Forward Transfer Admittance
V(BR)GSO
IDSS
VGS(off)
yfs
IGS=--10
μ
A
VDS=3V, VGS=0
VDS=3V, ID=100
μ
A
VDS=3V, ID=10mA
V
30
40
70
mA
V
mS
--0.5
20
--5.0
35
Continued on next page.
Preliminary
2
1
2
3
0.4
18
(0.9
±
0.05)
0
0
0
4.1
0
±
00
18
±
00
±
0
±
0.02
±
0.1
1 : Drain
2 : Source
3 : Gate
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