參數(shù)資料
型號(hào): SGF5N150UF
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: General Description
中文描述: 10 A, 1500 V, N-CHANNEL IGBT
封裝: TO-3PF, 3 PIN
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 292K
代理商: SGF5N150UF
SGF5N150UF Rev. B
S
2003 Fairchild Semiconductor Corporation
Electrical Characteristics of IGBT
T
C
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage
I
CES
Collector Cut-Off Current
I
GES
G-E Leakage Current
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
1500
--
--
--
--
--
--
V
1.0
± 100
mA
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 5mA, V
CE
= V
GE
2.0
3.0
4.0
V
V
CE(sat)
I
C
= 5A
,
V
GE
= 10V
--
4.7
5.5
V
Dynamic Characteristics
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
V
CE
= 10V
,
V
GE
= 0V,
f = 1MHz
--
--
--
780
130
70
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
Q
g
Total Gate Charge
Q
ge
Gate-Emitter Charge
Q
gc
Gate-Collector Charge
V
CC
= 600 V
I
C
= 5A
R
G
=10
V
GE
= 10V
Inductive Load
T
C
= 25
°
C
--
--
--
--
--
--
--
--
--
--
10
15
30
70
190
100
290
30
3
15
--
--
50
120
--
--
580
45
5
25
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
V
CE
= 600 V, I
C
= 5A
V
GE
= 10V
相關(guān)PDF資料
PDF描述
SGI25N40 N-Channel IGBT(N溝道絕緣柵雙極晶體管(IGBT))
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