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參數(shù)資料
| 型號： | SGD06N60 |
| 廠商： | SIEMENS A G |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速 S-IGBT) |
| 中文描述： | 12 A, 600 V, N-CHANNEL IGBT, TO-252AA |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 254K |
| 代理商： | SGD06N60 |
SGP06N60, SGB06N60
SGD06N60, SGU06N60
1
Mar-00
Fast S-IGBT in NPT-technology
G
C
E
75% lower
E
off
compared to previous generation combined with
low conduction losses
Short circuit withstand time – 10
μ
s
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Type
V
CE
I
C
V
CE(sat
)
T
j
Package
Ordering Code
SGP06N60
600V
6A
2.3V
150
°
C
TO-220AB
Q67041-A4709-A2
SGB06N60
SGD06N60
SGU06N60
TO-263AB
TO-252AA(DPAK)
TO-251AA(IPAK)
Q67041-A4709-A4
Q67041-A4709-A5
Q67041-A4709-A6
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
150
°
C
Gate-emitter voltage
V
CE
I
C
600
V
A
12
6.9
I
Cpuls
-
24
24
V
GE
E
AS
±
20
34
V
Avalanche energy, single pulse
I
C
= 6 A,
V
CC
= 50 V,
R
GE
= 25
,
start at
T
j
= 25
°
C
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
≤
600V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
mJ
t
SC
10
μ
s
P
tot
68
W
T
j
,
T
stg
-55...+150
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
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| SGU06N60 | Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速 S-IGBT) |
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參數(shù)描述 |
|---|---|
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| SGD-100 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:C to X Band, Mixer, Modulator Applications |
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| SGD102 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:C to X Band, Mixer, Modulator Applications |
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