參數(shù)資料
型號(hào)： SGD02N60
廠商： INFINEON TECHNOLOGIES AG
英文描述： FAST IGBT IN NPT TECHNOLOGY
中文描述： 快速IGBT技術(shù)在不擴(kuò)散核武器條約
文件頁(yè)數(shù)： 2/13頁(yè)
文件大?。?/td> 389K
代理商： SGD02N60
Preliminary
SGP02N120
SGB02N120, SGD02N120
Power Semiconductors
2
Mar-00
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB
1)
R
thJC
2.0
R
thJA
TO-220AB
62
R
thJA
TO-263AB(D2PAK)
40
K/W
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
CE(sat)
V
GE
=0V,
I
C
=100
μ
A
V
GE
= 15V,
I
C
=2A
T
j
=25
°
C
T
j
=150
°
C
I
C
=100
μ
A,
V
CE
=
V
GE
V
CE
=1200V,
V
GE
=0V
T
j
=25
°
C
T
j
=150
°
C
V
CE
=1200V,
V
GE
=0V
V
CE
=20V,
I
C
=2A
1200
-
-
Collector-emitter saturation voltage
2.5
-
3.1
3.7
3.6
4.3
Gate-emitter threshold voltage
V
GE(th)
I
CES
3
4
5
V
Zero gate voltage collector current
-
-
-
-
25
100
μ
A
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
I
GES
g
fs
-
-
100
-
nA
S
1.5
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
205
28
17
11
250
34
21
-
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=960V,
I
C
=2A
V
GE
=15V
TO-220AB
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
2)
L
E
-
7
-
nH
I
C(SC)
V
GE
=15V,
t
SC
≤
10
μ
s
100V
≤
V
CC
≤
1200V,
T
j
≤
150
°
C
-
24
-
A
1)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
μ
m thick) copper area for
collector connection. PCB is vertical without blown air.
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SGD02N60BUMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) TO-252 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 6.0A 30W TO252-3
SGD02N60XT 制造商:Infineon Technologies 功能描述:Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) TO-252
SGD04N60 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 4A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGD04N60BUMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 9.4A 3-Pin(2+Tab) TO-252 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 9.4A 50W TO252-3
SGD06N60 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 6A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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