- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374783 > SGB30N60 (SIEMENS A G) Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速 S-IGBT) PDF資料下載
參數(shù)資料
| 型號(hào)： | SGB30N60 |
| 廠商： | SIEMENS A G |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速 S-IGBT) |
| 中文描述： | 41 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 268K |
| 代理商： | SGB30N60 |
SGP30N60
SGB30N60, SGW30N60
2
Mar-00
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
R
thJC
0.5
R
thJA
TO-247AC
40
K/W
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
CE(sat)
V
GE
=0V,
I
C
=500
μ
A
V
GE
= 15V,
I
C
=30A
T
j
=25
°
C
T
j
=150
°
C
I
C
=700
μ
A,
V
CE
=
V
GE
V
CE
=600V,
V
GE
=0V
T
j
=25
°
C
T
j
=150
°
C
V
CE
=0V,
V
GE
=20V
V
CE
=20V,
I
C
=30A
600
-
-
Collector-emitter saturation voltage
1.7
-
2.1
2.5
2.4
3.0
Gate-emitter threshold voltage
V
GE(th)
I
CES
3
4
5
V
Zero gate voltage collector current
-
-
-
-
40
3000
μ
A
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
I
GES
g
fs
-
-
-
100
-
nA
S
20
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
1600
150
92
140
1920
180
110
182
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=480V,
I
C
=30A
V
GE
=15V
TO-247AC
Fehler!
Verweisquelle
konnte nicht
gefunden
werden.
V
GE
=15V,
t
SC
≤
10
μ
s
V
CC
≤
600V,
T
j
≤
150
°
C
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
L
E
-
-
7
13
-
nH
Short circuit collector current
1)
I
C(SC)
-
300
-
A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SGP30N60 | Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速 S-IGBT) |
| SGW30N60 | Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速 S-IGBT) |
| SGD-100T | C to X Band, Mixer, Modulator Applications |
| SGD-100 | GaAs Schottky Barrier Diode（C to X Band, Mixer, Modulator Applications）(應(yīng)用于C到X帶寬，混頻器和調(diào)制器的砷化鎵肖特基勢(shì)壘二極管) |
| SGD102 | C to X Band, Mixer, Modulator Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SGB30N60_09 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation |
| SGB30N60ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 41A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 41A 250W TO263-3 |
| SGB30N60-E3045A | 制造商:Infineon Technologies AG 功能描述: |
| SGB30UF | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:60 mA 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER |
| SGB30UFSMS | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。