參數(shù)資料
型號(hào)： SGB15N60
廠商： INFINEON TECHNOLOGIES AG
英文描述： Fast IGBT in NPT-technology
中文描述： 在不擴(kuò)散核武器條約快速IGBT技術(shù)
文件頁(yè)數(shù)： 7/12頁(yè)
文件大?。?/td> 460K
代理商： SGB15N60
SGP15N120
SGP15N120
SGW15N120
Power Semiconductors
7
Jul-02
E
,
S
0A
10A
I
C
,
COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
j
= 150
°
C,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 33
,
dynamic test circuit in Fig.E )
20A
30A
40A
50A
0mJ
2mJ
4mJ
6mJ
8mJ
10mJ
12mJ
14mJ
E
on
*
E
off
E
ts
*
E
,
S
0
25
50
75
0mJ
1mJ
2mJ
3mJ
4mJ
5mJ
E
ts
*
E
on
*
E
off
R
G
,
GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 15A,
dynamic test circuit in Fig.E )
E
,
S
-50°C
0°C
50°C
100°C
150°C
0mJ
1mJ
2mJ
3mJ
4mJ
E
ts
*
E
on
*
E
off
Z
t
,
T
1μs
10μs
100μs
t
p
,
PULSE WIDTH
1ms
10ms 100ms
1s
10
-3
K/W
10
-2
K/W
10
-1
K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D
=0.5
T
j
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 15A,
R
G
= 33
,
dynamic test circuit in Fig.E )
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(
D
=
t
p
/
T
)
*)
E
on
and
E
ts
include losses
due to diode recovery.
*)
E
on
and
E
ts
include losses
due to diode recovery.
*)
E
and
E
include losses
due to diode recovery.
C
1
=
τ
1
/
R
1
R
1
R
2
C
2
=
τ
2
/
R
2
R
,(K/W )
0.09751
0.29508
0.13241
0.10485
τ
,
(s)
0.67774
0.11191
0.00656
0.00069
相關(guān)PDF資料
PDF描述
SGP15N60 Fast IGBT in NPT-technology
SGW15N60 Fast IGBT in NPT-technology
SGP15N60 Short Circuit Rated IGBT
SGW15N60 Short Circuit Rated IGBT
SGW15N60RUF FEEDTHRU CAPACITOR, 47PF 0.5A 100VFEEDTHRU CAPACITOR, 47PF 0.5A 100V; Capacitance:0.047nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, +:50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp,
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SGB15N60_06 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology
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