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參數(shù)資料
| 型號： | SGB02N60 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | FAST IGBT IN NPT TECHNOLOGY |
| 中文描述： | 快速IGBT技術(shù)在不擴散核武器條約 |
| 文件頁數(shù)： | 12/13頁 |
| 文件大?。?/td> | 389K |
| 代理商： | SGB02N60 |
Preliminary
SGP02N120
SGB02N120, SGD02N120
Power Semiconductors
12
Mar-00
Published by
Infineon Technologies AG i Gr
.,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or
systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
相關PDF資料 |
PDF描述 |
|---|---|
| SGP02N60 | FAST IGBT IN NPT TECHNOLOGY |
| SGP20N60HS | High Speed IGBT in NPT-technology |
| SGW20N60HS | High Speed IGBT in NPT-technology |
| SGP30N60HS | HIGHT SPEED IGBT CHIP IN NPT-TECHNOLOGY |
| SGQ1553-1 | MILITARY/AEROSPACE PRODUCTS |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SGB02N60_06 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation |
| SGB02N60ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 6A 30W TO263-3 |
| SGB04N60 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 4A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGB04N60_06 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation |
| SGB06N60 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 6A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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