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| 型號： | SG2013 |
| 廠商： | Microsemi Corporation |
| 英文描述： | HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS |
| 中文描述： | 中型高壓電流驅(qū)動陣列 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 98K |
| 代理商： | SG2013 |
SG2000 SERIES
4/90 Rev 1.3 6/97
Copyright
1997
L
IN
F
IN
ITY
Microelectronics Inc.
11861 Western Avenue
∞
∞
Garden Grove, CA 92841
(714) 898-8121
∞
FAX: (714) 893-2570
4
Parameter
Units
Min. Typ. Max.
Limits
Test Conditions
Applicable
Devices
All
SG2012
SG2014
All
Temp.
ELECTRICAL CHARTACTERISTICS
(continued)
SG2011 thru SG2015
Output Leakage Current (I
CEX
)
Collector - Emitter (V
CE(SAT)
)
Input Current (I
IN(ON)
)
(I
IN(OFF)
)
Input Voltage (V
IN(ON)
)
D-C Forward Current
Transfer Ratio (h
FE
)
Input Capacitance (C
IN
)
(Note 3)
Turn-On Delay (TPLH)
Turn-Off Delay (TPHL)
Clamp Diode Leakage Current (I
R
)
Clamp Diode Forward Voltage (V
F
)
SG2012
SG2013
SG2014
SG2015
All
SG2012
SG2013
SG2014
SG2015
SG2011
All
All
All
All
All
T
A
= T
MIN
T
A
= T
MIN
T
A
= T
T
A
= 25°C
T
A
= 25°C
T
A
= 25°C
T
A
= T
MAX
T
A
= T
MAX
T
A
= T
MAX
T
A
= T
MAX
T
A
= T
MIN
T
A
= T
MAX
T
A
= T
MIN
T
A
= T
MIN
T
A
= T
MIN
T
A
= T
MAX
T
A
= T
MAX
T
A
= T
MAX
T
A
= T
MIN
T
A
= T
MIN
T
A
= T
MIN
T
A
= T
MAX
T
A
= T
MAX
T
A
= T
MAX
T
A
= T
MIN
T
A
= T
MIN
T
A
= T
MAX
T
A
= T
MAX
T
A
= T
T
A
= 25°C
T
A
= 25°C
T
A
= 25°C
T
A
= 25°C
V
CE
= 50V
V
CE
= 50V, V
IN
= 6V
V
= 50V, V
IN
= 1V
I
C
= 500mA, I
B
= 1100
μ
A
I
C
= 350mA, I
B
= 850
μ
A
I
C
= 200mA, I
B
= 550
μ
A
I
C
= 500mA, I
B
= 600
μ
A
I
C
= 350mA, I
B
= 500
μ
A
I
C
= 200mA, I
B
= 350
μ
A
I
C
= 500mA, I
B
= 600
μ
A
I
C
= 350mA, I
B
= 500
μ
A
I
C
= 200mA, I
B
= 350
μ
A
V
IN
= 17V
V
IN
= 3.85V
V
IN
= 5V
V
IN
= 12V
V
= 3V
I
C
= 500
μ
A
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 250mA
V
CE
= 2V, I
C
= 300mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 250mA
V
CE
= 2V, I
C
= 300mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 275mA
V
CE
= 2V, I
C
= 350mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 275mA
V
CE
= 2V, I
C
= 350mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 350mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 350mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 500mA
0.5 E
IN
to 0.5 E
OUT
0.5 E
to 0.5 E
OUT
V
= 50V
I
F
= 350mA
I
F
= 500mA
480
650
240
650
1180
25
450
900
1.8
1.6
1.3
1.7
1.25
1.1
1.8
1.6
1.3
850
930
350
1000
1500
50
15
250
250
1.7
100
500
500
2.1
1.8
1.5
1.9
1.6
1.3
2.1
1.8
1.5
1300
1350
500
1450
2400
23.5
17
3.6
3.9
6.0
2.7
3.0
3.5
10
12
17
7.0
8.0
9.5
3.0
3.5
2.4
2.6
25
1000
1000
50
2.0
2.5
μ
A
μ
A
μ
A
V
V
V
V
V
V
V
V
V
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
pF
ns
ns
μ
A
V
V
Note 3. These parameters, although guaranteed, are not tested in production.
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