
SG1524/SG2524/SG3524
4/90 Rev 1.1 2/94
Copyright
1994
L
IN
F
IN
ITY
Microelectronics Inc.
11861 Western Avenue
∞
∞
Garden Grove, CA 92841
(714) 898-8121
∞
FAX: (714) 893-2570
3
V
IN
= 40V
Standby Current
0.8
0.5
0.2
Threshold Voltage
T
= 25
°
C
MIN
≤
T
J
≤
MAX
200
190
Current Limit Amplifier Section
(Note 6)
Sense Voltage
Input Bias Current
Shutdown Section
49
0
45
49
45
P.W.M. Comparator
(Note 4)
Minimum Duty Cycle
Maximum Duty Cycle
V
COMP
= 0.5V
V
COMP
= 3.6V
0
%
%
Error Amplifier Section
(Note 5)
Input Offset Voltage
Input Bias Current
Input Offset Current
DC Open Loop Gain
Output Low Level
Output High Level
Common Mode Rejection
Supply Voltage Rejection
Gain-Bandwidth Product
(Note 7)
R
S
≤
2K
R
L
≥
10M
,
T
J
= 25
°
C
V
PIN 1
- V
PIN 2
≥
150mV
V
PIN 2
- V
≥
150mV
V
CM
= 1.8V to 3.4V
V
IN
= 8V to 40V
T
J
= 25
°
C
ELECTRICAL CHARACTERISTICS
(continued)
36
34
200
3
0.6
3.2
0.3
Oscillator Section
(Note 4)
Initial Accuracy
Voltage Stability
Maximum Frequency
Sawtooth Peak Voltage
Sawtooth Valley Voltage
Clock Amplitude
Clock Pulse Width
Min. Typ. Max. Min. Typ. Max.
SG1524/2524
SG3524
Units
Test Conditions
Parameter
T
= 25
°
C
MIN
≤
T
≤
MAX
V
IN
= 8V to 40V
R
T
= 2K
, C
T
= 1nF
V
IN
= 40V
V
IN
= 8V
KHz
KHz
%
KHz
V
V
V
μ
s
44
46
1
3.8
1.2
1.5
40
0.1
400
1
36
34
200
3
0.6
3.2
0.3
44
46
1
3.8
1.2
1.5
40
0.1
400
1
mV
μ
A
μ
A
dB
V
V
dB
dB
MHz
10
10
2
0.5
2
1
0.2
4.2
2
60
3.8
1
5
10
1
0.5
0.5
1
0.2
4.2
2
72
3.8
70
55
1
210
200
180
200
220
200
mV
μ
A
T
J
= 25
°
C
1.2
1.8
0.5
0.2
0.8
1.2
1.8
V
V
μ
A
V
V
μ
s
μ
s
50
2
0.4
0.2
50
2
0.4
0.2
17
17
Output Section
(each transistor)
Collector Leakage Current
Collector Saturation Voltage
Emitter Output Voltage
Collector Voltage Rise Time
Collector Voltage Fall Time
Power Consumption
V
= 40V
I
C
= 50mA
I
E
= 50mA
R
C
= 2K
R
C
= 2K
Note 4. F
OSC
= 40KHz (R
T
= 2.9K
, C
T
= .01
μ
F)
Note 5. V
CM
= 2.5V
Note 6. V
= 0V
Note 7. These parameters, although guaranteed over the recommended operating conditions, are not 100% tested in production.
10
7
10
7
mA