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參數(shù)資料
| 型號： | SFWI9630 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 先進(jìn)的功率MOSFET |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 253K |
| 代理商： | SFWI9630 |
P-C HANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25
o
C unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/
T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain( “ Miller “ ) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V/
o
C
V
nA
μ
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=-250
μ
A
I
D
=-250
μ
A
See Fig 7
V
DS
=-5V,I
D
=-250
μ
A
V
GS
=-30V
V
GS
=30V
V
DS
=-200V
V
DS
=-160V,T
C
=125
o
C
V
GS
=-10V,I
D
=-3.3A
V
DS
=-40V,I
D
=-3.3A
V
DD
=-100V,I
D
=-6.5A,
R
G
=12
See Fig 13
V
DS
=-160V,V
GS
=-10V,
I
D
=-6.5A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=-25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
μ
C
Integral reverse pn-diode
in the MOSFET
T
J
=25
o
C,I
S
=-6.5A,V
GS
=0V
T
J
=25
o
C,I
F
=-6.5A
di
F
/dt=100A/
μ
s
O
4
O
4
O
5
O
4
O
4
O
5
O
4
O
1
O
4
SFW/I9630
-200
--
-2.0
--
--
--
--
--
-0.17
--
--
--
--
--
125
49
14
22
41
17
29
5.8
13.6
--
--
-4.0
-100
100
-10
-100
0.8
--
965
185
75
35
55
90
45
36
--
--
4.2
740
--
--
--
160
0.96
-6.5
-26
-5.0
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=20mH, I
AS
=-6.5A, V
DD
=-50V, R
G
=27
*
, Starting T
J
=25
o
C
I
SD
-6.5A, di/dt 400A/
μ
s, V
DD
BV
DSS
, Starting T
J
=25
o
C
Pulse Test : Pulse Width = 250
μ
s, Duty Cycle 2%
Essentially Independent of Operating Temperature
O
5
O
1
O
O
3
O
2
4
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|---|---|
| SFWI9634 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
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| SFWI9644 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| SFWI9Z14 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| SFWI9Z24 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
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