參數(shù)資料
型號(hào)： SFU9220
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Advanced Power MOSFET
中文描述： 3.1 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
封裝： IPAK-3
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 257K
代理商： SFU9220
P-C HANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25
o
C unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/
T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain( “ Miller “ ) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V/
o
C
V
nA
μ
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=-250
μ
A
I
D
=-250
μ
A
See Fig 7
V
DS
=-5V,I
D
=-250
μ
A
V
GS
=-30V
V
GS
=30V
V
DS
=-200V
V
DS
=-160V,T
C
=125
o
C
V
GS
=-10V,I
D
=-1.6A
V
DS
=-40V,I
D
=-1.6A
V
DD
=-100V,I
D
=-3.5A,
R
G
=18
See Fig 13
V
DS
=-160V,V
GS
=-10V,
I
D
=-3.5A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=-25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
μ
C
Integral reverse pn-diode
in the MOSFET
T
J
=25
o
C,I
S
=-3.1A,V
GS
=0V
T
J
=25
o
C,I
F
=-3.5A
di
F
/dt=100A/
μ
s
O
4
O
4
O
5
O
4
O
4
O
5
O
4
O
1
O
4
SFR/U9220
-200
--
-2.0
--
--
--
--
--
-0.18
--
--
--
--
--
70
26
12
22
33
15
15
3.3
7.5
--
--
-4.0
-100
100
-10
-100
1.5
--
540
105
40
35
55
75
40
19
--
--
2.2
415
--
--
--
125
0.59
-3.1
-12
-5.0
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=40mH, I
AS
=-3.1A, V
DD
=-50V, R
G
=27
*
, Starting T
J
=25
o
C
I
SD
-3.5A, di/dt
300A/
μ
s, V
DD
BV
DSS
, Starting T
J
=25
o
C
Pulse Test : Pulse Width = 250
μ
s, Duty Cycle 2%
Essentially Independent of Operating Temperature
O
5
O
1
O
O
3
O
2
4
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SFU9220TU 功能描述:MOSFET PCh/200V/3.1a/1.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SFU9220TU_AM002 功能描述:MOSFET P-Ch 200V 3.1A 1.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SFU9220TU_F080 功能描述:MOSFET Trans P-Ch 200V 3.1A 3Pin 3+Tab RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SFU9224 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET
SFU9224TU 功能描述:MOSFET PCh/250V/2.5a/2.4Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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