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參數(shù)資料
| 型號： | SFT8600-4 |
| 廠商： | Solid States Devices, Inc. |
| 英文描述： | 1 AMP 1000 VOLTS NPN TRANSISTOR |
| 中文描述： | 1安培1000伏特NPN晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 66K |
| 代理商： | SFT8600-4 |
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
SFT8600/4
PRELIMINARY
MIN
MAX
ELECTRICAL CHARACTERISTICS
Collector Cutoff Current
(V
CE
= 400V
DC
)
SYMBOL
UNITS
:
A
Emitter Cutoff Current
(V
EB
= 4V
DC
)
DC Current Gain *
(I
C
= 5mA
DC ,
V
CE
= 5V
DC
)
(I
C
= 10mA
DC ,
V
CE
= 5V
DC
)
(I
C
= 100mA
DC ,
V
CE
= 5V
DC
)
(I
C
= 250mA
DC ,
V
CE
= 5V
DC
)
Collector-Emitter Saturation Voltage *
(I
C
= 20mA
DC ,
I
B
= 2mA
DC
)
(I
C
= 100mA
DC ,
I
B
= 10mA
DC
)
Base-Emitter Saturation Voltage *
(I
C
= 20mA
DC ,
I
B
= 2mA
DC
)
(I
C
= 100mA
DC ,
I
B
= 10mA
DC
)
Current Gain Bandwidth Product
(I
C
= 100mA
DC ,
V
CE
= 10V
DC,
f = 10MHz)
Output Capacitance
(V
CB
= 20V
DC ,
I
E
= 0A
DC,
f = 1.0MHz)
Delay Time
Rise Time
Storage Time
Fall Time
-
I
EBO
1
30
40
20
15
:
A
-
I
CEO
10
0.3
0.5
V
DC
200
8
-
MHz
fT
15
pf
-
C
ob
V
DC
(V
CC
= 125V
DC
,
I
C
= 100mA
DC ,
I
B1
= 20mA
DC ,
I
B2
= 40mA
DC
)
nsec
nsec
:
sec
nsec
t
d
t
r
t
s
t
f
-
50
150
3
800
*Pulse Test: Pulse Width = 300
:
s, Duty Cycle = 2%
0.8
1.0
CASE OUTLINE:
CLCC-4
PIN 1: COLLECTOR
PIN 2: EMITTER
PIN 3: BASE
PIN 4: N/C
hFE
V
BE (SET)
V
CE(SAT)
-
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