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參數(shù)資料
| 型號： | SFT6800-59 |
| 廠商： | Solid States Devices, Inc. |
| 英文描述： | 2 AMP 500 VOLTS NPN TRANSISTOR |
| 中文描述： | 2安培500伏特NPN晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 112K |
| 代理商： | SFT6800-59 |
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT6800/59
ELECTRICAL CHARACTERISTICS
Symbol
Min
Max
Units
Collector – Emitter Breakdown Voltage
(I
C
= 20 mA)
Collector – Base Breakdown Voltage
(I
C
= 100
μ
A
DC
)
Emitter – Base Breakdown Voltage
(I
E
= 20
μ
A
DC
)
Collector Cutoff Current
(V
CB
= 400 V
DC
)
Collector Cutoff Current
(V
CE
= 400 V
DC
, V
EB
= 1.5 V
DC
)
Emitter Cutoff Current
(V
EB
= 6 V
DC
)
BV
CEO
400
––
––
V
BV
CBO
500
––
V
BV
EBO
10
––
V
I
CBO
––
200
nA
I
CEV
––
200
nA
I
EBO
––
200
nA
DC Current Gain*
(V
CE
= 5 V
DC
)
(I
C
= 50 mA
DC
)
(I
C
= 500 mA
DC
)
(I
C
= 1.0 A
DC
)
H
FE
50
40
15
––
––
––
Collector – Emitter Saturation Voltage*
(I
C
= 500 mA
DC
, I
B
= 50 mA
DC
)
Base – Emitter Saturation Voltage*
(I
C
= 500 mA
DC
, I
B
= 50 mA
DC
)
Current Gain Bandwidth Product
(I
C
= 50 mA
DC
, V
CE
= 10 V
DC
, f = 20 MHz)
Output Capacitance
(V
CB
= 30 V
DC
, I
E
= 0 A
DC
, f = 2.0 MHz)
V
CE (SAT)
––
500
mV
DC
V
BE (SAT)
––
1.0
V
DC
f
T
25
––
MHz
C
obo
––
40
pf
Turn On Time
t
(on)
––
700
ns
Turn Off Time
(V
CC
= 330 V
DC
, I
C
= 500 mA
DC
,
I
B1
= I
B2
= 100 mA
DC
R
B1
= R
B2
= 330
t
(off)
––
2000
ns
* Pulse Test: Pulse Width = 300
μ
sec, Duty Cycle = 2%
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0009E
DOC
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