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參數(shù)資料
| 型號(hào)： | SFT6678 |
| 廠商： | Solid States Devices, Inc. |
| 英文描述： | 15 AMPS 400 Volts NPN High Speed Power Transistor |
| 中文描述： | 15安培400伏特，npn型高速功率晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 45K |
| 代理商： | SFT6678 |
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0019C
DOC
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics
SFT6678 SERIES
Symbol
Min
Max
Units
Collector Cutoff Current
V
CE
=650V
DC
, V
BE
(off) =1.5V
DC
T
C
=25°C
T
C
=100°C
I
CEV
-
-
0.1
1.0
mA
Collector – Base Leakage Current
Emitter Cutoff Current
V
CB
=650V
I
CBO
-
1
mA
(V
EB
= 8V, I
C
= 0)
I
EBO
-
2
mA
Collector-Emitter Sustaining Voltage
(IC = 200mA, IB = 0)
DC Current Gain *
V
CEO(sus)
400
-
V
DC
VCE=3V, 1C=15A, TA= 25°C
VCE=3V, 1C=1A, TA= 25°C
VCE=3V, 1C=15A,TA= -55°C
H
F
E1
H
F
E2
H
F
E3
8
15
4
-
-
-
Base-Emitter Saturation Voltage *
(IC = 15A
DC
, IB = 3A
DC
)
Collector-Emitter Saturation Voltage *
(IC = 15A, IB = 3A)
Second Breakdown
(t = 1.0 sec, TC = 25oC)
V
BE
(SAT)
-
1.5
V
DC
(TC = 25°C)
(TC = 100°C)
V
CE (SAT)
(VCC = 11.7V)
(VCC = 20V)
(VCC = 100V)
1.5
2.0
V
DC
I
S/b1
I
S/b2
I
S/b3
15.0
8.75
0.3
-
-
-
A
A
A
Reverse Bias Second Breakdown
(VBE (off) = 1 to 6V, VCLAMP = 450V, TC < 100oC)
RBSOA
15.0
-
A
Current Gain
(IC = 1A, VCE = 10VDC, f = 5MHz)
Output Capacitance
(VCB = 10VDC , f = 0.1MHz)
|h
FE
|
3
10
C
ob
150
500
pF
Delay Time
Storage Time
Rise Time
Fall Time
(V
CC
= 200V
DC ,
I
C
= 15A
DC
,
I
B1
= I
B2
= 3A
DC
,
t
P
= 50
μ
sec, Duty Cycle < 2%
V
B
= 6V
DC ,
R
L
= 13.5
)
t
d
t
s
t
r
t
f
––
––
0.1
0.6
2.5
0.5
μ
sec
Cross Over Time
(I
C
= 15 A(pk), V
CLAMP
= 450V, I
B1
= 3 A, V
BE(off)
=
6V)
t
c
––
0.5
μ
sec
NOTES:
* Pulse Test: Pulse Width = 300
μ
s, Duty Cycle < 2%
1/
For Ordering Information, Price, and Availability Contact Factory.
2/
Screening per MIL-PRF-19500.
3/
For Package Outlines Contact Factory.
4/
Up and Down Bend Configurations Available for M and Z (TO-254 and TO-254Z) Packages Only.
5/ All Electrical Characteristics @ 25
o
C, Unless Otherwise Specified.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SFT6678/3 | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:15 AMPS 400 Volts NPN High Speed Power Transistor |
| SFT6678_1 | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:NPN High Speed Power Transistor |
| SFT6678M | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:15 AMPS 400 Volts NPN High Speed Power Transistor |
| SFT6678MDB | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:15 AMPS 400 Volts NPN High Speed Power Transistor |
| SFT6678MUB | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:15 AMPS 400 Volts NPN High Speed Power Transistor |
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