- 您現(xiàn)在的位置：買賣IC網 > PDF目錄382498 > SFRU9214 (Fairchild Semiconductor Corporation) Advanced Power MOSFET PDF資料下載
參數資料
| 型號： | SFRU9214 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 先進的功率MOSFET |
| 文件頁數： | 2/7頁 |
| 文件大?。?/td> | 309K |
| 代理商： | SFRU9214 |
SFR/U9214
-250
--
-2.0
--
--
--
--
--
-0.21
--
--
--
--
--
35
13
10
18
24
11
9
2.0
4.6
--
--
-4.0
-100
100
-10
-100
4.0
--
295
55
20
30
45
60
30
11
--
--
1.0
225
--
--
--
130
0.61
-1.53
-6.1
-4.0
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=75mH, I
AS
=-1.53A, V
DD
=-50V, R
G
=27
*
, Starting T
J
=25
o
C
I
SD
-1.6A, di/dt
250A/
μ
s, V
DD
BV
DSS
, Starting T
J
=25
o
C
Pulse Test : Pulse Width = 250
μ
s, Duty Cycle
Essentially Independent of Operating Temperature
O
5
2%
<
<
<
<
O
1
O
O
O
2
3
4
P-CHANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25
o
C unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/
T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain( “Miller “) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V/
o
C
V
nA
μ
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=-250
μ
A
I
D
=-250
μ
A
See Fig 7
V
DS
=-5V,I
D
=-250
μ
A
V
GS
=-30V
V
GS
=30V
V
DS
=-250V
V
DS
=-200V,T
C
=125
o
C
V
GS
=-10V,I
D
=-0.77A
V
DS
=-40V,I
D
=-0.77A
V
DD
=-125V,I
D
=-1.6A,
R
G
=24
See Fig 13
V
DS
=-200V,V
GS
=-10V,
I
D
=-1.6A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=-25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
μ
C
Integral reverse pn-diode
in the MOSFET
T
J
=25
o
C,I
S
=-1.53A,V
GS
=0V
T
J
=25
o
C,I
F
=-1.6A
di
F
/dt=100A/
μ
s
O
1
O
4
O
4
O
4
O
4
O
5
O
4
O
4
O
5
S
相關PDF資料 |
PDF描述 |
|---|---|
| SFU9214 | Advanced Power MOSFET |
| SFS2955 | Advanced Power MOSFET |
| SFS9510 | Advanced Power MOSFET |
| SFS9520 | Advanced Power MOSFET |
| SFS9530 | Advanced Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SFRU9220 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| SFRU9224 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| SFRU9310 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| SFRXR-1STXXLF_DWG | 制造商:FCI-CONNECTOR 制造商全稱:FCI connector 功能描述:CAT NO. TABLE FOR 0.8mm SPACING CONNECTOR |
| SFRXXR-1STXXLF | 制造商:FCI-CONNECTOR 制造商全稱:FCI connector 功能描述:SFRXXR-1STXXLF |
發(fā)布緊急采購，3分鐘左右您將得到回復。