
P-C HANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25
o
C unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/
T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(
£¢
Miller
£¢
) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V/
o
C
V
nA
μ
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=-250
μ
A
I
D
=-250
μ
A
See Fig 7
V
DS
=-5V,I
D
=-250
μ
A
V
GS
=-30V
V
GS
=30V
V
DS
=-200V
V
DS
=-160V,T
C
=125
o
C
V
GS
=-10V,I
D
=-0.8A
V
DS
=-40V,I
D
=-0.8A
V
DD
=-100V,I
D
=-1.75A,
R
G
=18
See Fig 13
V
DS
=-160V,V
GS
=-10V,
I
D
=-1.75A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=-25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
μ
C
Integral reverse pn-diode
in the MOSFET
T
J
=25
o
C,I
S
=-1.6A,V
GS
=0V
T
J
=25
o
C,I
F
=-1.75A
di
F
/dt=100A/
μ
s
O
4
O
4
O
4
O
4
O
5
O
5
O
4
O
1
O
4
SFR/U9210
-200
--
-2.0
--
--
--
--
--
-0.2
--
--
--
--
--
45
16
10
20
27
12
9
1.8
4.8
--
--
-4.0
-100
100
-10
-100
3.0
--
285
65
25
30
50
65
35
11
--
--
1.0
220
--
--
--
110
0.42
-1.6
-6.4
-4.0
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=70mH, I
AS
=-1.6A, V
DD
=-50V, R
G
=27
*
, Starting T
J
=25
o
C
I
SD
-1.75A, di/dt
250A/
μ
s, V
DD
BV
DSS
, Starting T
J
=25
o
C
Pulse Test : Pulse Width = 250
μ
s, Duty Cycle
Essentially Independent of Operating Temperature
O
5
2%
<
<
<
<
O
1
O
O
3
O
2
4
1999 Fairchild Semiconductor Corporation