參數(shù)資料
型號(hào): SFR9230B
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 200V P-Channel MOSFET
中文描述: 5.4 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: DPAK-3
文件頁數(shù): 6/9頁
文件大?。?/td> 628K
代理商: SFR9230B
2002 Fairchild Semiconductor Corporation
Rev. B, December 2002
S
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
V
DS
+
_
Driver
R
G
(N-Channel)
V
GS
I
SD
controlled by pulse period
V
DD
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Period
-Gate Pulse Width
-Gate Pulse Width
Compliment of DUT
dv/dt controlled by R
G
Body Diode
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SFI9530 Advanced Power MOSFET
SFWI9530 Advanced Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SFR9230BTF 功能描述:MOSFET -200V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SFR9230BTM 功能描述:MOSFET PCh/200V/5.4a/0.8Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SFR9230BTM_AM002 功能描述:MOSFET 200V/5.4A/0.8Ohm P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SFR9230BTMAM002 制造商:Fairchild Semiconductor Corporation 功能描述:
SFR9230TM 制造商:Fairchild Semiconductor Corporation 功能描述: