參數(shù)資料
型號： SFR9210F
廠商： Fairchild Semiconductor Corporation
英文描述： Advanced Power MOSFET
中文描述： 先進的功率MOSFET
文件頁數(shù)： 2/7頁
文件大?。?/td> 265K
代理商： SFR9210F
P-C HANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25
o
C unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/
T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(
￡￠
Miller
￡￠
) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V/
o
C
V
nA
μ
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=-250
μ
A
I
D
=-250
μ
A
See Fig 7
V
DS
=-5V,I
D
=-250
μ
A
V
GS
=-30V
V
GS
=30V
V
DS
=-200V
V
DS
=-160V,T
C
=125
o
C
V
GS
=-10V,I
D
=-0.8A
V
DS
=-40V,I
D
=-0.8A
V
DD
=-100V,I
D
=-1.75A,
R
G
=18
See Fig 13
V
DS
=-160V,V
GS
=-10V,
I
D
=-1.75A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=-25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
μ
C
Integral reverse pn-diode
in the MOSFET
T
J
=25
o
C,I
S
=-1.6A,V
GS
=0V
T
J
=25
o
C,I
F
=-1.75A
di
F
/dt=100A/
μ
s
O
4
O
4
O
4
O
4
O
5
O
5
O
4
O
1
O
4
SFR/U9210
-200
--
-2.0
--
--
--
--
--
-0.2
--
--
--
--
--
45
16
10
20
27
12
9
1.8
4.8
--
--
-4.0
-100
100
-10
-100
3.0
--
285
65
25
30
50
65
35
11
--
--
1.0
220
--
--
--
110
0.42
-1.6
-6.4
-4.0
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=70mH, I
AS
=-1.6A, V
DD
=-50V, R
G
=27
*
, Starting T
J
=25
o
C
I
SD
-1.75A, di/dt
250A/
μ
s, V
DD
BV
DSS
, Starting T
J
=25
o
C
Pulse Test : Pulse Width = 250
μ
s, Duty Cycle
Essentially Independent of Operating Temperature
O
5
2%
<
<
<
<
O
1
O
O
3
O
2
4
1999 Fairchild Semiconductor Corporation
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SFR9210TF 功能描述:MOSFET P-CH/200V/1.6A/3OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SFR9210TM 功能描述:MOSFET P-CH/200V/1.6A/3OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SFR9214 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Advanced Power MOSFET
SFR9214TF 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SFR9214TM 功能描述:MOSFET P-CH/250V/1.53A/4OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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