參數(shù)資料
型號(hào)： SFR9110
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 功率晶體管
英文描述： Advanced Power MOSFET
中文描述： 2.8 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： DPAK-3
文件頁(yè)數(shù)： 1/7頁(yè)
文件大小： 253K
代理商： SFR9110
SFR/U9110
BV
DSS
= -100 V
R
DS(on)
= 1.2
I
D
= -2.8 A
-100
-2.8
-2.0
11
±
30
52
-2.8
2.0
-6.5
2.5
20
0.16
- 55 to +150
300
6.25
50
110
--
--
--
n
Avalanche Rugged Technology
n
Rugged Gate Oxide Technology
n
Lower Input Capacitance
n
Improved Gate Charge
n
Extended Safe Operating Area
n
Lower Leakage Current : 10
μ
A (Max.) @ V
DS
= -100V
n
Lower R
DS(ON)
: 0.912
(Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
θ
JC
R
θ
JA
R
θ
JA
o
C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
*
*
When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
o
C)
Continuous Drain Current (T
C
=100
o
C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25
o
C)
Total Power Dissipation (T
C
=25
o
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W
W/
o
C
A
o
C
*
D-PAK
1. Gate 2. Drain 3. Source
1
2
3
I-PAK
1
3
2
O
1
O
O
1
O
1
2
O
3
Rev. C
相關(guān)PDF資料
PDF描述
SFU9130 Advanced Power MOSFET
SFRU9130 Advanced Power MOSFET
SFR9130 Advanced Power MOSFET
SFU9220 Advanced Power MOSFET
SFRU9220 Advanced Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SFR9110TF 功能描述:MOSFET PCh/100V/2.8a/1.2Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SFR9110TM 功能描述:MOSFET PCh/100V/2.8a/1.2Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SFR9120 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Advanced Power MOSFET
SFR9120TF 功能描述:MOSFET PCh/100V/4.9a/0.6Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SFR9120TM 功能描述:MOSFET PCh/100V/4.9a/0.6Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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