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參數(shù)資料
| 型號： | SFR1020 |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 整流器 |
| 英文描述： | ULTRA-FAST RECOVERY RECTIFIER DIODES |
| 中文描述： | 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 125K |
| 代理商： | SFR1020 |
UTC SFR1020
DIODE
UTC UNISONIC TECHNOLOGIES CO., LTD.
2
www.unisonic.com.tw
QW-R601-004,A
ABSOLUTE MAXIMUM RATINGS
(limiting values, per diode)
PARAMETER
SYMBOL
RATINGS
UNIT
Repetitive peak reverse voltage
VRRM
200
V
RMS forward current
IF(RMS)
10
A
Average forward current δ= 0.5
TC=125℃ (Per diode)
IF(AV)
5
A
Surge non repetitive forward current
tp=10ms sinusoidal
IFSM
50
A
Storage temperature range
Tstg
-60 ~ +150
℃
ELECTRICAL CHARACTERISTICS
(per diode)
PARAMETER
SYMBOL
TEST CONDITONS
MIN
TYP
MAX
UNIT
Tj = 25℃
50
A
Reverse leakage current
IR *
Tj = 100℃
VR = VRRM
0.6
mA
Tj = 125℃
IF= 5 A
0.8
0.99
Tj = 125℃
IF= 10 A
0.95
1.20
Forward voltage drop
VF **
Tj = 25℃
IF = 10 A
1.25
V
* tp = 5 ms,
δ< 2 %
** tp = 380 s,
δ< 2 %
To evaluate the conduction losses use the following equation: P = 0.78× IF(AV) + 0.042 × IF
2(RMS)
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Reverse recovery time
trr
Tj = 25℃, IF = 0.5A , Irr = 0.25A , IR = 1A
30
ns
Formard recovery time
tfr
Tj = 25℃, IF= 1A, dIF/dt = 50 A/s
VFR = 1.1×VF max
20
ns
VFP
Tj = 25℃, IF= 1A, dIF/dt = 50 A/s
3
V
THERMAL RESISTANCES
PARAMETER
SYMBOL
RATINGS
UNIT
Per diode
4.0
Junction to case
Total
Rth (j-c)
2.4
Coupling
Rth (c)
0.7
℃
/W
When diodes 1 and 2 are used simultaneously :
Tj (diode 1) = P(diode 1)×Rth(j-c)(Per diode) + P(diode 2) × Rth(c)
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