參數(shù)資料
型號(hào)： SFP9640L
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： Advanced Power MOSFET
中文描述： 11 A, 200 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220, 3 PIN
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 224K
代理商： SFP9640L
SFP9640L
-200
--
-1.0
--
--
--
--
--
-0.16
--
--
--
--
--
207
81
16
23
54
19
46
9.2
22.9
--
--
-2.0
-100
100
-10
-100
0.5
--
1585
310
120
40
55
115
50
59
--
--
5.47
1220
--
--
--
205
1.45
-11
-44
-5.0
--
--
Notes ;
①
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
②
L=3mH, I
AS
=-11A, V
DD
=-50V, R
G
=27
, Starting T
J
=25
℃
③
I
SD
≤
-11A, di/dt
≤
100A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
=25
℃
④
Pulse Test : Pulse Width = 250
μ
s, Duty Cycle
≤
2%
⑤
Essentially Independent of Operating Temperature
N-CHANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25
℃
unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
Δ
BV/
Δ
T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(
＂
Miller
＂
) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V/
℃
V
nA
μ
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=-250
μ
A
I
D
=-250
μ
A
See Fig 7
V
DS
=-5V,I
D
=-250
μ
A
V
GS
=-20V
V
GS
=20V
V
DS
=-200V
V
DS
=-160V,T
C
=125
℃
V
GS
=-5V,I
D
=-5.5A
④
V
DS
=-40V,I
D
=-5.5A
④
V
DD
=-100V,I
D
=-11A,
R
G
=4.6
See Fig 13
④ ⑤
V
DS
=-160V,V
GS
=-5V,
I
D
=-11A
See Fig 6 & Fig 12
④ ⑤
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=-25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
①
Diode Forward Voltage
④
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
μ
C
Integral reverse pn-diode
in the MOSFET
T
J
=25
℃
,I
S
=-11A,V
GS
=0V
T
J
=25
℃
,I
F
=-11A
di
F
/dt=100A/
μ
s
④
S
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