參數(shù)資料
型號(hào): SFL044J
廠商: SOLID STATE DEVICES INC
元件分類: 功率晶體管
英文描述: 30 AMP / 60 Volts / 0.030 ヘ N-Channel, Logic Level POWER MOSFET
中文描述: 30 A, 60 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
封裝: HERMETIC SEALED PACKAGE-3
文件頁數(shù): 2/2頁
文件大?。?/td> 82K
代理商: SFL044J
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00265D
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics @ T
J
= 25
o
C
(Unless Otherwise Specified)
Drain to Source Breakdown Voltage
(VGS=0 V, ID=250
μ
A
)
Drain to Source On State Resistance
(VGS=5 V, ID=18A
)
Drain to Source On Resistance
(VGS=4 V, ID= 15A
)
Gate Threshold Voltage
(VDS=VGS, ID= 250
μ
A
)
Forward Transconductance
(VDS>10V, IDS=18A
)
Zero Gate Voltage Drain Current
(VDS=max rated voltage, VGS=0 V)
(VDS=80% rated VDS, VGS=0 V, TA=150oC)
SFL044J
Symbol
Min
Typ
Max
Units
BV
DSS
60
––
––
Volts
R
DS(on)1
––
0.026
0.030
Ω
R
DS(on)2
0.034
0.040
Ω
V
GS(th)
1.0
1.5
2.0
V
g
fs
22
35
––
S(mho)
I
DSS
––
––
––
––
25
250
μ
A
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
At rated VGS
I
GSS
––
––
––
––
+100
-100
nA
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
Diode Forward Voltage
(IS= Rated ID, VGS=0 V, TJ=25oC)
Diode Reverse Recovery Time
Input Capacitance
Input Capacitance
Reverse Transfer Capacitance
VGS= 5 Volts
80% rated VDS
ID= 51 A
VDD=50% Rated VDS
Q
g
Q
gs
Q
gd
td
(on)
tr
td
(off)
tf
––
––
––
––
––
––
––
50
10
38
17
230
42
110
66
12
43
––
––
––
––
nC
ID= 51 A
RG= 4.6
Ω
RD= 0.56
Ω
nsec
V
SD
––
––
2.5
V
T
J
=25oC, IF=51A
di/dt=100A/
μ
sec
VGS=0 Volts
VDS=25 Volts
t
rr
C
iss
C
oss
C
rss
––
––
––
––
100
3300
1200
200
180
––
––
––
nsec
f=1 MHz
pF
For thermal derating curves and other characteristics please contact SSDI Marketing Department.
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