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參數(shù)資料
| 型號： | SFI9640 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | P-CHANNEL POWER MOSFET |
| 中文描述： | 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | I2PAK-3 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 261K |
| 代理商： | SFI9640 |
P-C HANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
Fig 11. Thermal Response
Fig 10. Max. Drain Current vs. Case Temperature
Fig 9. Max. Safe Operating Area
P
DM
.
t
1.
t
2.
SFW/I9640
-75
-50
-25
0
25
50
75
100
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
@ Notes :
1. V
GS
= -10 V
2. I
D
= -5.5 A
R
D
D
T
J
, Junction Temperature [
o
C]
-75
-50
-25
0
25
50
75
100
125
150
175
0.8
0.9
1.0
1.1
1.2
@ Notes :
1. V
GS
= 0 V
2. I
D
= -250
μ
A
-
D
D
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10 ms
DC
1 ms
0.1 ms
@ Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
Operation in This Area
is Limited by R
DS(on)
-
D
-V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0
2
4
6
8
10
12
-
D
T
c
, Case Temperature [
o
C]
10
-5
10
-4
t
1
, Square Wave Pulse Duration [sec]
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
single pulse
0.2
0.1
0.01
0.02
0.05
D=0.5
@ Notes :
1. Z
θ
JC
(t)=1.02
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
-T
C
=P
DM
*Z
θ
JC
(t)
Z
θ
J
(
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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| SFI9644 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-CHANNEL POWER MOSFET |
| SFI9644TU | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SFI9Z14 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| SFI9Z14TU | 功能描述:MOSFET P-CH/60V/6.7A/0.5OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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