參數(shù)資料
型號: SFI9530
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: Advanced Power MOSFET
中文描述: 10.5 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA
封裝: I2PAK-3
文件頁數(shù): 3/7頁
文件大?。?/td> 233K
代理商: SFI9530
SFW/I9530
10
-1
10
0
10
1
10
-1
10
0
10
1
@ Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
V
GS
Top : - 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
-
D
-V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
25
o
C
175
o
C
- 55
o
C
@ Notes :
1. V
GS
= 0 V
2. V
DS
= -40 V
3. 250
μ
s Pulse Test
-
D
-V
GS
, Gate-Source Voltage [V]
0
7
14
21
28
35
42
0.0
0.2
0.4
0.6
0.8
1.0
@ Note : T
J
= 25
o
C
V
GS
= -20 V
V
GS
= -10 V
R
D
]
D
-I
D
, Drain Current [A]
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
10
-1
10
0
10
1
175
o
C
25
o
C
@ Notes :
1. V
GS
= 0 V
2. 250
μ
s Pulse Test
-
D
-V
SD
, Source-Drain Voltage [V]
10
0
10
1
0
500
1000
1500
C
iss
= C
gs
+ C
gd
(
C
ds
= shorted
)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
@ Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
-V
DS
, Drain-Source Voltage [V]
0
5
10
15
20
25
30
35
0
5
10
V
DS
= -80 V
V
= -50 V
V
= -20 V
@ Notes : I
D
=-10.5 A
-
G
Q
G
, Total Gate Charge [nC]
P-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source Voltage
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 4. Source-Drain Diode Forward Voltage
Fig 3. On-Resistance vs. Drain Current
相關PDF資料
PDF描述
SFWI9530 Advanced Power MOSFET
SFW9540 P-CHANNEL POWER MOSFET
SFI9540 P-CHANNEL POWER MOSFET
SFW9624 Advanced Power MOSFET
SFW9634 Advanced Power MOSFET
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