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參數(shù)資料
| 型號(hào)： | SFH640 |
| 廠商： | SIEMENS AG |
| 英文描述： | PHOTOTRANSISTOR 5.3 KV TRIOS HIGH BV CER VOLTAGE OPTOCOUPLER |
| 中文描述： | 光電晶體管5.3千伏三人高BV減量電壓光耦合器 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 90K |
| 代理商： | SFH640 |
5–1
FEATURES
CTR at I
SFH640-1, 40-80%
SFH640-2, 63-125%
SFH640-3*, 100-200%
Good CTR Linearity with Forward Current
Low CTR Degradation
Very High Collector-Emitter Breakdown Volt-
age, BV
CER
=300 V
Isolation Test Voltage: 5300 VAC
Low Coupling Capacitance
High Common Mode Transient Immunity
Phototransistor Optocoupler
6 Pin DIP Package with Base Connection
Field Effect Stable: TRIOS
VDE 0884 Available with Option 1
Underwriters Lab File #E52744
DESCRIPTION
F
=10 mA, V
CE
=10 V
RMS
+
The SFH 640 is an optocoupler with very high
BVCER, a minimum of 300 volts. It is intended for
telecommunications applications or any DC appli-
cation requiring a high blocking voltage. The
SFH640 is a “better than” replacement for H11D1.
*Supplies from this group can't always be guranteed due
to unforseeable yield spread.
+
TRIOS
–
TR
ansparent
IO
n
S
hield
D E
SFH 640
PHOTOTRANSISTOR
HIGH BV
CER
OPTOCOUPLER
5.3 KV TRIOS
VOLTAGE
Maximum Ratings
Emitter
Reverse Voltage ...................................................................................6 V
DC Forward Current....................................................................... 60 mA
Surge Forward Current (tp
≤
10
μ
s) .................................................. 2.5 A
Total Power Dissipation............................................................... 100 mW
Detector
Collector-Emitter Voltage ................................................................ 300 V
Collector-Base Voltage.....................................................................300 V
Emitter-Base Voltage ..........................................................................7 V
Collector Current........................................................................... 50 mA
Surge Collector Current (tp
≤
1 ms) ............................................... 100 mA
Total Power Dissipation............................................................... 300 mW
Package
Isolation Test Voltage (between emitter and
detector, refer to climate DIN 40046 part 2
Nov. 74) ...................................................... 5300 VAC
Isolation Resistance
V
IO
=500 V, T
A
=25
°
C
.........................................................................≥
V
IO
=500 V, T
A
=100
°
C
.......................................................................≥
Insulation Thickness between Emitter and Detector ..................
Creepage
.................................................................................................≥
Clearance
.................................................................................................≥
Comparative Tracking Index
per DIN IEC 112/VDE 0303, part1...................................................175
Storage Temperature Range .......................................... -55
Operating Temperature Range....................................... -55
J unction Temperature......................................................................100
Soldering Temperature (max. 10 sec., dip soldering:
distance to seating plane
≥
1.5 mm).............................................260
(T
A
=25
°
C)
RMS
/7500
VAC
PK
10
10
0.4 mm
7 mm
7 mm
12
11
≥
°
°
C to +150
C to +100
°
°
°
C
C
C
°
C
Dimensions in inches (mm)
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.150 (3.81)
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
Pin One ID
6
5
4
1
2
3
18
°
typ.
4
°
typ.
1
2
3
6
5
4
Base
Collector
Emitter
Anode
Cathode
NC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SFH640-1 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR 40-80% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| SFH640-2 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR 63-125% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| SFH640-2 | 制造商:Vishay Intertechnologies 功能描述:OPTOCOUPLER H/V TRANSISTOR O/P |
| SFH640-2X007 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR > 63-125% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| SFH640-3 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
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