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參數(shù)資料
| 型號(hào)： | SFH640-2-X001 |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 光電耦合器 |
| 英文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封裝： | DIP-6 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 456K |
| 代理商： | SFH640-2-X001 |
Document Number: 83682
www.vishay.com
Revision 17-August-01
2–259
FEATURES
CTR at IF=10 mA, VCE=10 V
SFH640-1, 40-80%
SFH640-2, 63-125%
SFH640-3*, 100-200%
Good CTR Linearity with Forward Current
Low CTR Degradation
Very High Collector-emitter Breakdown
Voltage, BVCER=300 V
Isolation Test Voltage: 5300 VRMS
Low Coupling Capacitance
High Common Mode Transient Immunity
Phototransistor Optocoupler
6 Pin DIP Package with Base Connection
Field Effect Stable by TRIOS
(TRansparent IOn Shield)
VDE 0884 Available with Option 1
Underwriters Lab File #E52744
DESCRIPTION
The SFH 640 is an optocoupler with very high
BVCER, a minimum of 300 volts. It is intended for
telecommunications applications or any DC appli-
cation requiring a high blocking voltage. The
SFH640 is a “better than” replacement for H11D1.
*Supplies from this group can't always be guaran-
teed due to unforeseeable yield spread.
V
DE
SFH640
5.3 kV TRIOS High BVCER Voltage
Phototransistor Optocoupler
Maximum Ratings (TA=25°C)
Emitter
Reverse Voltage................................................................................. 6.0 V
DC Forward Current......................................................................... 60 mA
Surge Forward Current (tP≤10 s) .................................................... 2.5 A
Total Power Dissipation................................................................ 100 mW
Detector
Collector-emitter Voltage ................................................................. 300 V
Collector-base Voltage...................................................................... 300 V
Emitter-base Voltage ......................................................................... 7.0 V
Collector Current............................................................................. 50 mA
Surge Collector Current (tP≤1.0 ms) .............................................. 100 mA
Total Power Dissipation................................................................ 300 mW
Package
Isolation Test Voltage (between emitter and
detector, refer to climate DIN 40046 part 2
Nov. 74) .................................................................5300 VRMS/7500 VPK
Isolation Resistance
VIO=500 V, TA=25°C .................................................................. ≥10
12
VIO=500 V, TA=100°C ................................................................ ≥10
11
Insulation Thickness between Emitter and Detector ...................
≥0.4 mm
Creepage.....................................................................................
≥7.0 mm
Clearance ....................................................................................
≥7.0 mm
Comparative Tracking Index
per DIN IEC 112/VDE 0303, part1 ....................................................175
Storage Temperature Range........................................... –55
°C to +150°C
Operating Temperature Range ....................................... –55
°C to +100°C
Junction Temperature .......................................................................100
°C
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane
≥1.5 mm)...............................................260°C
.010 (.25)
typ.
.114 (2.90)
.130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
1
2
3
18
°
3
°–9°
.300–.347
(7.62–8.81)
4
°
typ.
Dimensions in inches (mm)
1
2
3
6
5
4
Base
Collector
Emitter
Anode
Cathode
NC
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相關(guān)代理商/技術(shù)參數(shù) |
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| SFH640-2X007 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR > 63-125% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| SFH640-3 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| SFH640-3X007 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR>100-200% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| SFH640-3X007T | 功能描述:晶體管輸出光電耦合器 SMD-6 CPLR W.BASE 100-200% CT RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| SFH640-3X009 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Optocoupler, Phototransistor Output, with Base Connection, 300 V BVCEO |
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