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參數(shù)資料
| 型號： | SFH4590 |
| 廠商： | SIEMENS A G |
| 元件分類： | 紅外LED |
| 英文描述： | Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter |
| 中文描述： | 5 mm, 1 ELEMENT, INFRARED LED, 880 nm |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 58K |
| 代理商： | SFH4590 |
Semiconductor Group
4
1998-09-09
SFH 4590
SFH 4595
Kennwerte
(
T
A
= 25
°
C)
Characteristics
Bezeichnung
Description
Symbol
Symbol
λ
peak
Wert
Value
Einheit
Unit
Wellenlnge der Strahlung
Wavelength of peak emission
I
F
= 100 mA,
t
P
= 20 ms
Spektrale Bandbreite bei 50% von
I
max
Spectral bandwidth at 50% of
I
max
I
F
= 100 mA,
t
P
= 20 ms
Abstrahlwinkel
Half angle
880
nm
λ
25
nm
±
14
Grad
deg.
mm
2
Aktive Chipflche
Active chip area
A
0.09
Abmessungen der aktiven Chipflche
Dimension of the active chip area
L
×
B
L
×
W
t
r
,
t
f
0.3
×
0.3
mm
Schaltzeiten,
I
e
von 10% auf 90% und von
90% auf 10%, bei
I
F
= 100 mA,
t
P
= 20 ms,
R
L
= 50
Switching times,
I
e
from 10% to 90% and from
90% to10%,
I
F
= 100 mA,
t
P
= 20 ms,
R
L
= 50
Kapazitt
Capacitance
V
R
= 0 V,
f
= 1 MHz
Durchla
β
spannung
Forward voltage
I
F
= 100 mA,
t
p
= 20 ms
I
F
= 1 A,
t
p
= 100
μ
s
Sperrstrom
Reverse current
V
R
= 3 V
Gesamtstrahlungsflu
β
Total radiant flux
I
F
= 100 mA,
t
p
= 20 ms
Temperaturkoeffizient von
I
e
bzw.
Φ
e
,
I
F
= 100 mA
Temperature coefficient of
I
e
or
Φ
e
,
I
F
= 100 mA
10
ns
C
o
35
pF
V
F
V
F
I
R
1.5
(≤
2.0)
3.0
(≤
3.8)
0.01
(≤
10)
V
V
μ
A
Φ
e
25
mW
TC
I
– 0.44
%/K
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| SFH4591 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter |
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| SFH460 | 制造商:OSRAM 制造商全稱:OSRAM 功能描述:GaAlAs-Lumineszenzdiode |
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