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參數(shù)資料
| 型號： | SFH426 |
| 廠商： | SIEMENS A G |
| 元件分類： | 紅外LED |
| 英文描述： | GaAlAs-IR-Lumineszenzdiode in SMT-Gehause GaAlAs Infrared Emitter in SMT Package |
| 中文描述： | 2.4 mm, 1 ELEMENT, INFRARED LED, 880 nm |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 53K |
| 代理商： | SFH426 |
SFH 421
SFH 426
Semiconductor Group
5
1997-11-01
Lthinweise
Soldering conditions
Zustzliche Informationen über allgemeine Ltbedingungen finden Sie im Datenbuch S. 103ff.
For additional information on generel soldering conditions please refer to our Data Book on
page 169ff.
Bauform
Types
Tauch-, Schwall- und Schleppltung
Dip, wave and drag soldering
Reflowltung
Reflow soldering
Ltbad-
temperatur
Temperature
of the
soldering
bath
260
°
C
Maximal
zulssige
Ltzeit
Max. perm.
soldering
time
Abstand
Ltstelle –
Gehuse
Distance
between
solder joint
and case
–
Ltzonen-
temperatur
Temperature
of soldering
zone
Maximale
Durchlaufzeit
Max. transit
time
TOPLED
SIDELED
–
8 s
–
–
245
°
C
≥
225
°
C
10 s
10 s
Permissible pulse handling capability
I
F
=
f
(
t
p
)
duty cycle
D
= Parameter,
T
A
= 25
°
C
10
Ι
F
OHR00886
1
2
10
3
10
4
10
mA
-5
10
s
=
D
F
Ι
T
DC
0.005
0.01
0.02
0.05
=
D
p
t
T
t
p
p
t
0.5
0.2
0.1
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
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PDF描述 |
|---|---|
| SFH431 | INFRARED EMITTER |
| SFH435 | GaAs INFRARED EMITTER DOUBLE EMITTING DIODE |
| SFH4515 | GaAs-IR-Lumineszenzdioden 950 nm GaAs Infrared Emitters 950 nm |
| SFH4580 | GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters 880 nm |
| SFH4585 | GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters 880 nm |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SFH426-Z | 制造商:OSRAM 功能描述:Q65110A2512_INFRARED EMITTERS SIDELED |
| SFH4271 | 制造商:OSRAM 功能描述:Infrared TOPLED 880nm 120??,SFH4271 |
| SFH4271-Z | 制造商:OSRAM 功能描述: |
| SFH4272 | 制造商:OSRAM 制造商全稱:OSRAM 功能描述:Red Emitter |
| SFH4276 | 制造商:OSRAM 制造商全稱:OSRAM 功能描述:Rote Punktlichtquelle Red Pointsource Emitter Lead (Pb) Free Product - RoHS Compliant |
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