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參數(shù)資料
| 型號(hào)： | SFF9130-28D |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | -11 AMP -100 VOLTS 0.30 ohm DUAL UNCOMMITED P-Channel Power MOSFET |
| 中文描述： | 11 A, 100 V, 0.35 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HERMETIC SEALED, CERAMIC, LCC-28 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 276K |
| 代理商： | SFF9130-28D |
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
SFF9130-28D
PRELIMINARY
ELECTRICAL CHARACTERISTICS @ T
J
=25
o
C
(Unless Otherwise Specified)
RATING
V
Drain to Source Breakdown Voltage
(VGS =0 V, ID =1mA)
-
BV
DSS
-
SYMBOL
MIN
TYP
MAX
UNIT
-100
S
Drain to Source ON State Resistance
1/
(VGS = -10 V)
Gate Threshold Voltage
(VDS =VGS, ID =250
:
A)
Forward Transconductance
(VDS > ID(on) x RDS (on) Max, IDS = 7A)
Zero Gate Voltage Drain Current
(VDS = 80% rated VDS, VGS =0 V, T
A
= 25
o
C )
(VDS = 80% rated VDS, VGS =0 V, T
A
= 125
o
C )
-
-
R
DS(on)
0.30
0.35
-
-
V
-
V
GS(th)
-4.0
-2.0
S(
é
)
5.0
gf
s
-
3.0
:
A
-
-
I
DSS
-
-
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
-
-
I
GSS
-100
100
-
-
At rated VGS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off DELAY Time
Fall Time
Diode Forward Voltage
(I
S
= rated I
D
, V
GS
= 0V, T
J
= 25
o
C)
VGS = -10 Volts
50% rated VDS
ID = -11A
VDD = 50% of
rated VDS
ID = 11A
RG = 7.5
S
Qg
Qgs
Qgd
t
d (on)
tr
t
d (off)
tf
15
1
2
-
-
-
-
26
3
14
15
10
30
12
29
7.1
21
60
140
140
140
nsec
V
-
V
SD
-4.7
-
Diode Reverse Recovery Time
Reverse Recovery Charge
125
-
t
rr
Q
RR
250
3
-
-
TJ = 25
o
C
IF = 10A
di/dt = 100A/
:
sec
VGS = 0 Volts
VDS = -25 Volts
f = 1 MHz
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
-
-
-
860
350
125
-
-
-
pF
nsec
:
C
For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.
nC
nA
-25
250
I
D
= 7A
I
D
= 11A
NOTES:
1/ All package pins of the same terminations (Drain/Source/Gate) must be connected together to minimize
R
DS(on)
and maximize current carrying capability.
V
Temperature Coefficient of Breakdown Voltage
0.87
)
BV
DSS
)
T
J
-
-
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| SFF9130J | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:-11 AMP -100 VOLTS 0.30 ohm P-Channel Power MOSFET |
| SFF9130M | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:-11 AMP -100 VOLTS 0.30 ohm P-Channel Power MOSFET |
| SFF9130Z | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:-11 AMP -100 VOLTS 0.30 ohm P-Channel Power MOSFET |
| SFF9140 | 功能描述:MOSFET P-Ch/100V/13a/0.2Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SFF9140/3 | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:-18 AMP -100 VOLTS 0.20 ohm P-Channel Power MOSFET |
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