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參數(shù)資料
| 型號： | SFF75N06-28 |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 30 AMP 60 VOLTS 25mヘ N-CHANNEL POWER MOSFET |
| 中文描述： | 30 A, 100 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HERMETIC SEALED, CERAMIC, LCC-28 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 276K |
| 代理商： | SFF75N06-28 |
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
SFF75N06-28
PRELIMINARY
ELECTRICAL CHARACTERISTICS @ T
J
=25
o
C
(Unless Otherwise Specified)
RATING
V
Drain to Source Breakdown Voltage
(VGS =0 V, ID =250
:
A)
Drain to Source
ON State Resistance
2/
(VGS = 10 V)
-
BV
DSS
-
SYMBOL
MIN
TYP
MAX
UNIT
60
m
S
23
25
27
R
DS(on)
25
27
-
-
-
-
V
Gate Threshold Voltage
(VDS =VGS, ID =250
:
A)
Forward Transconductance
(VDS > ID(on) x RDS (on) Max,
IDS =60% rated ID)
Zero Gate Voltage Drain Current
(VDS =80% rated VDS, VGS =0 V, T
A
= 25
o
C )
(VDS =80% rated VDS, VGS =0 V, T
A
= 125
o
C )
-
V
GS(th)
4
2
S(
é
)
35
gf
s
-
15
:
A
-
-
I
DSS
-
-
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
-
-
I
GSS
100
100
-
-
At rated VGS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off DELAY Time
Fall Time
Diode Forward Voltage
(I
S
= rated I
D
, V
GS
= 0V, T
J
= 25
o
C)
VGS =10 Volts
50% rated VDS
Rated ID
VDD =50%
rated VDS
rated ID
RG = 6.2
S
Qg
Qgs
Qgd
t
d (on)
tr
t
d (off)
tf
-
-
-
-
-
-
-
83
13
40
20
35
65
40
100
20
55
40
70
130
80
nsec
V
1.47
V
SD
1.6
-
Diode Reverse Recovery Time
Reverse Recovery Charge
70
t
rr
150
-
TJ =25
o
C
IF = 10A
di/dt = 100A/
:
sec
VGS =0 Volts
VDS =25 Volts
f =1 MHz
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
-
-
-
2600
700
260
2900
1100
275
pF
nsec
For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.
nC
nA
10
100
60% of Rated ID, T
C
= 25
o
C
Rated ID, T
C
= 25
o
C
60% of Rated ID, T
C
= 150
o
C
NOTES:
1/ Die Rating: 75Amps.
2/ All package pins of the same terminations (Drain/Source/Gate) must be connected together to minimize
R
DS(on)
and maximize current carrying capability.
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| SFF75N06M | 75 AMP 60 VOLTS 15m OHM N-Channel Power MOSFET |
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| SFF75N08M | 55 AMP (note 1) /75 Volts 8.5 mO N-Channel Trench Gate MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SFF75N06M | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:75 AMP 60 VOLTS 15m OHM N-Channel Power MOSFET |
| SFF75N06Z | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:75 AMP 60 VOLTS 15m OHM N-Channel Power MOSFET |
| SFF75N08M | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:55 AMP (note 1) /75 Volts 8.5 mO N-Channel Trench Gate MOSFET |
| SFF75N08Z | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:55 AMP (note 1) /75 Volts 8.5 mO N-Channel Trench Gate MOSFET |
| SFF75N10/3 | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:75 AMP 100 VOLTS 0.025 OHM N-Channel POWER MOSFET |
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