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參數(shù)資料
| 型號： | SFF15N80-3 |
| 廠商： | Solid States Devices, Inc. |
| 英文描述： | 15 AMPS 800 VOLTS 0.60 ヘ N-CHANNEL POWER MOSFET |
| 中文描述： | 15安培800伏特，0.60ヘN溝道功率MOSFET |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 59K |
| 代理商： | SFF15N80-3 |
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF15N80/3
ELECTRICAL CHARACTERISTICS @ T
J
=25
o
C
(Unless Otherwise Specified)
RATING
V
Drain to Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 3mA)
Drain to Source ON State Resistance
(V
GS
= 10 V, I
D
= 7.5A)
-
BV
DSS
-
SYMBOL
MIN
TYP
MAX
UNIT
800
S
-
R
DS(on)
0.65
-
V
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 4mA)
-
V
GS(th)
4.5
2.0
:
A
Zero Gate Voltage Drain Current
(V
DS
= 640V, V
GS
= 0V)
-
-
I
DSS
-
-
Gate to Source Leakage Forward
(
V
GS
= ±20V, V
DS
= 0V)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
I
GSS
±100
-
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Diode Forvard Voltage
(I
S
= 15A, V
GS
= 0V, T
J
= 25
o
C)
V
GS
= 10 V
V
DS
= 400V
I
D
= 7.5A
V
GS
= 10V
V
DD
= 400V
I
D
= 7.5A
R
G
= 2
S
Qg
Qgs
Qgd
t
d (on)
tr
t
d (off)
tf
-
-
-
-
-
-
-
128
30
55
20
33
63
32
155
45
80
50
50
100
50
nsec
V
-
V
SD
1.50
-
Diode Reverse Recovery Time
-
t
rr
800
-
I
F
= 15A,
V
R
= 100V
di/dt = 100A/
:
sec
V
GS
= 0 Volts
V
DS
= 25 Volts
f =1 MHz
Ciss
Coss
Crss
3965
315
73
-
-
-
4870
395
120
pF
nsec
nC
nA
250
1000
NOTES:
T
A
= 25
o
C
T
A
= 125
o
C
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