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參數(shù)資料
| 型號： | SFF1310Z |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 40 AMPS 200 VOLTS 0.050 ヘ N-CHANNEL POWER MOSFET |
| 中文描述： | 40 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 69K |
| 代理商： | SFF1310Z |
SOLID STATE DEVICES, INC.
14830 Valley View Av. * La Mirada, Ca 90670
Phone: (562) 404-7855 * Fax: (562) 404-1773
SFF1310M
SFF1310Z
PRELIMINARY
ELECTRICAL CHARACTERISTICS @ T
J
=25
o
C
(Unless Otherwise Specified)
RATING
V
Drain to Source Breakdown Voltage
(VGS =0 V, ID =250
:
A)
Drain to Source ON State Resistance
(VGS = 10 V, 60% of Rated ID)
-
BV
DSS
-
SYMBOL
MIN
TYP
MAX
UNIT
200
S
-
-
R
DS(on)
0.050
-
-
V
Gate Threshold Voltage
(VDS =VGS, ID = 4mA)
-
V
GS(th)
4.0
2.0
S(
é
)
Forward Transconductance
(VDS > ID(on) x RDS (on) Max, IDS = 50% rated ID)
Zero Gate Voltage Drain Current
(V
GS
= 0V)
V
DS
= max rated Voltage, T
A
= 25
o
C
V
DS
= 80% rated V
DS
, T
A
= 125
o
C
25
-
20
:
A
-
-
I
DSS
-
-
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
-
-
I
GSS
+100
-100
-
-
At rated VGS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off DELAY Time
Fall Time
Diode Forvard Voltage
(I
S
= rated I
D
, V
GS
= 0V, T
J
= 25
o
C)
VGS = 10 V
50% rated VDS
50% rated ID
VDD =50%
rated VDS
50% rated ID
RG = 6.2
S
Qg
Qgs
Qgd
t
d (on)
tr
t
d (off)
tf
-
-
-
-
-
-
-
190
35
95
28
38
110
30
220
50
120
35
40
130
35
nsec
V
-
V
SD
1.50
-
Diode Reverse Recovery Time
Reverse Recovery Charge
-
1.5
t
rr
Q
RR
225
-
-
-
T
J
=25
o
C
IF = 10A
di/dt = 100A/
:
sec
VGS =0 Volts
VDS =25 Volts
f =1 MHz
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
-
-
-
4400
800
285
-
-
-
pF
nsec
:
C
A
ON State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10 V)
-
I
D(on)
-
50
nC
nA
250
1000
NOTES:
g
fs
I
D
= 37.5A
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