參數(shù)資料
型號(hào): SFF110S.22
廠商: SOLID STATE DEVICES INC
元件分類: 功率晶體管
英文描述: 3.5 A /100 Volts / 0.6 ヘ N-Channel MOSFET Transistor
中文描述: 3500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: HERMETIC SEALED, SMD.22, 3 PIN
文件頁數(shù): 2/2頁
文件大?。?/td> 40K
代理商: SFF110S.22
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, CA 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com *
www.ssdi-power.com
Electrical Characteristics
4/
SFF110S.22
Symbol
Min
Typ
Max
Units
Drain – Source Breakdown
Voltage
V
GS
= 0 V; I
D
= 1 mA
BV
DSS
100
––
––
Volts
Gate – Source Threshold
Voltage
V
DS
= 4 V; I
D
= 0.25 mA
V
DS
=4V; I
D
= 0.25mA; T
A
= 125oC
V
DS
=5V; I
D
= 0.25mA; T
A
= -55oC
V
GS(th)1
V
GS(th)2
V
GS(th)3
I
GSS1
I
GSS2
I
DSS1
I
DSS2
2.0
––
––
––
––
––
––
3.0
2.0
4.0
5
10
0.02
5
4.0
––
––
100
––
25
––
Volts
Gate Leakage Current
Drain Leakage Current
Static Drain – Source
On-State Resistance
V
GS
= +/- 20 V
V
GS
= +/- 20 V, T
A
= 125oC
V
GS
= 0 V; V
DS
= 80 V
V
GS
= 0V; V
DS
= 80 V, T
A
= 125oC
nA
m
A
V
GS
= 10 V, I
D
= 2.25 A
V
GS
= 10 V, I
D
= 3.50 A
R
DS(on)1
R
DS(on)2
––
––
0.55
0.58
0.60
0.61
V
GS
= 10V, I
D
= 2.25A, T
A
= 125oC
R
DS(on)3
––
1.05
––
Ohm
Forward Voltage of the
Source – Drain Diode
Switching Time Test:
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Gate Charge Test:
On-State Gate Charge
Gate – Source Charge
Gate – Drain Charge
Reverse Recovery Time
I
D
= 3.5 A
V
SD
––
1.2
1.5
Volts
I
D
= 3.5 A, V
GS
= 10 V,
R
G
= 7.5 ohm, V
DD
= 50 V
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
––
––
––
––
––
––
––
––
15
25
25
20
ns
V
GS
= 10 V, V
DS
= 50 V
––
––
––
––
––
––
6.55
1.61
3.46
nC
V
DD
= 50V, I
D
= 3.5 A,
dI/dt= 100 A/
μ
s
t
rr
––
––
180
ns
Capacitance Test:
Input Capacitance
Output Capacitance
Reverse Transfer Cap.
V
GS
= 0 V, V
DS
= 25 V, f = 1MHz
C
iss
C
oss
C
rss
––
––
––
180
85
15
––
––
––
pF
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0015A
DOC
NOTES:
* Pulse Test: Pulse Width = 300
μ
sec, Duty Cycle = 2%
1/ For Ordering Information, Price, Availability Contact
Factory.
2/ Screening per MIL-PRF-19500
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25oC.
相關(guān)PDF資料
PDF描述
SFF11N80B 11 AMP / 800 Volts 0.95 ohm N-Channel Power MOSFET
SFF11N80N 11 AMP / 800 Volts 0.95 ohm N-Channel Power MOSFET
SFF11N80P 11 AMP / 800 Volts 0.95 ohm N-Channel Power MOSFET
SFF11N80 11 AMP / 800 Volts 0.95 ヘ N-Channel MOSFET
SFF120-28Q 9.2 AMPS 100 VOLTS 0.35S QUAD N-CHANNEL POWER MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SFF116N10M 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:Avalanche Rated N-channel MOSFET
SFF116N10Z 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:Avalanche Rated N-channel MOSFET
SFF11N80 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:11 AMP / 800 Volts 0.95 ヘ N-Channel MOSFET
SFF11N80B 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:11 AMP / 800 Volts 0.95 ohm N-Channel Power MOSFET
SFF11N80N 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:11 AMP / 800 Volts 0.95 ohm N-Channel Power MOSFET