參數(shù)資料
型號(hào): SFAD508G
廠商: Taiwan Semiconductor Co., Ltd.
英文描述: 5.0 AMPS. Glass Passivated Super Fast Rectifiers
中文描述: 5.0安培。玻璃鈍化超快速整流器
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 58K
代理商: SFAD508G
- 252 -
Marking
0 5
0 5
30
5
.250(6.55)
.246(6.45)
.211(5.36)
.207(5.26)
.
.
.
.
.024(0.60)
.031(0.80)
.
.
.
.
.093(2.35)
.089(2.25)
.013(0.54)
.011(0.48)
.
.
.053(1.30)
.045(1.10)
.059(1.45)
.039(0.95)
.112(2.85)
.092(2.35)
.211(5.36)
.207(5.26)
.013(0.54)
.011(0.48)
1
2
3
SFAD501G
THRU
SFAD508G
5.0 AMPS. Glass Passivated Super Fast Rectifiers
Voltage Range
50 to 600 Volts
Current
5.0 Amperes
DPAK
Features
Ultrafast Recovery
Low forward voltage drop
High current capability
High reliability
High surge current capability
Mechanical Data
Case: Epoxy molded
Epoxy: UL 94V-O rate flame retardant
Terminals: Leads solderable per MIL-STD-
202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260
o
C/10 seconds.
Weight: 0.4 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current @T
C
= 100
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@5.0A
Maximum DC Reverse Current
@ T
A
=25
at Rated DC Blocking Voltage
@ T
A
=125
Maximum Reverse Recovery Time (Note 1)
Typical Thermal Resistance (Note 3)
Typical Junction Capacitance (Note 2)
Operating Temperature Range
Symbol
SFAD
501G
50 100 150 200 300 400 500 600
35
70 105 140 210 280 350 480
50 100 150 200 300 400 500 600
5.0
SFAD
502G
SFAD
503G
SFAD
504G
SFAD
505G
SFAD
506G
SFAD
507G
SFAD
508G
Units
V
RRM
V
RMS
V
DC
V
V
V
A
I
(AV)
I
FSM
55
A
V
F
1.3
1.7
1.8
V
I
R
100
2.0
35
9.0
μ
A
mA
nS
/W
pF
Trr
R
θ
JC
Cj
T
J
T
STG
50
30
-65 to +150
-65 to +150
Storage Temperature Range
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Thermal Resistance from Junction to Case Mounted on Hestsink.
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