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參數資料
| 型號： | SF3G48 |
| 廠商： | Toshiba Corporation |
| 英文描述： | THYRISTOR SILICON PLANAR TYPE |
| 中文描述： | 硅平面型晶閘管 |
| 文件頁數： | 2/6頁 |
| 文件大小： | 245K |
| 代理商： | SF3G48 |
SF3G48,SF3J48,USF3G48,USF3J48
2001-07-10
2
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
SF3G48
USF3G48
400
Repetitive Peak
Off
State Voltage and
Repetitive Peak
Reverse Voltage
SF3J48
USF3J48
V
DRM
V
RRM
600
V
SF3G48
USF3G48
500
Non
Repetitive Peak
Reverse Voltage
(Non
Repetitive <5ms,
T
j
= 0~125°C)
SF3J48
USF3J48
V
RSM
720
V
Average On
State Current
I
T (AV)
3
A
R.M.S On
State Current
I
T (RMS)
4.7
A
50 (50Hz)
Peak One Cycle Surge On
State
Current (Non
Repetitive)
I
TSM
55 (60Hz)
A
I
2
t Limit Value
I
2
t
12.5
A
2
s
Critical Rate of Rise of On
State
Current
(Note 1)
di / dt
100
A / μs
Peak Gate Power Dissipation
P
GM
5
W
Average Gate Power Dissipation
P
G (AV)
0.5
W
Peak Forward Gate Voltage
V
FGM
10
V
Peak Reverse Gate Voltage
V
RGM
5
V
Peak Forward Gate Current
I
GM
2
A
Junction Temperature
T
j
40~125
°C
Storage Temperature Range
T
stg
40~125
°C
Note 1: V
DRM
= 0.5 × Rated
I
TM
≤
12A
t
gw
≥
10μs
t
gr
≤
250ns
i
gp
= I
GT
× 2.0
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Repetitive Peak Off
State Current and
Repetitive Peak Reverse Current
I
DRM
I
RRM
V
DRM
= V
RRM
= Rated
―
―
10
μA
Peak On
State Voltage
V
TM
I
TM
= 12A
―
―
1.5
V
Gate Trigger Voltage
V
GT
―
―
1.0
V
Gate Trigger Current
I
GT
V
D
= 6V, R
L
= 10
―
―
10
mA
Gate Non
Trigger Voltage
V
GD
V
D
= Rated × 2 / 3, Tc = 125°C
0.2
―
―
V
Critical Rate of Rise of Off
State Voltage
dv / dt
V
DRM
= Rated, Tc = 125°C
Exponential Rise
―
50
―
V / μs
Holding Current
I
H
V
D
= 6V, I
TM
= 1A
―
―
40
mA
Latching Current
I
L
V
D
= 6V, f = 50Hz
t
gw
= 50μs, i
G
= 30mA
―
―
50
mA
Thermal Resistance
R
th (j
c)
Junction to Case, DC
―
―
3.6
°C / W
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|---|---|
| SF3J48 | THYRISTOR SILICON PLANAR TYPE |
| SF3GZ47 | TOSHIBA THYRISTOR SILICON DIFFUSED TYPE |
| SF3JZ47 | TOSHIBA THYRISTOR SILICON DIFFUSED TYPE |
| SF43G | 4.0 AMPS. Glass Passivated Super Fast Rectifiers |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SF3G48(Q) | 制造商:Toshiba America Electronic Components 功能描述:Thyristor SCR 400V 55A 3-Pin(3+Tab) TO-220FL |
| SF3GZ47 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA THYRISTOR SILICON DIFFUSED TYPE |
| SF3J48 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:THYRISTOR SILICON PLANAR TYPE |
| SF3JZ47 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA THYRISTOR SILICON DIFFUSED TYPE |
| SF3JZ47(F) | 制造商:Toshiba America Electronic Components 功能描述:Thyristor SCR 600V 55A 3-Pin(3+Tab) TO-220NIS |
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