參數(shù)資料
型號(hào)： SF30JG
廠商： DIODES INC
元件分類(lèi)： 參考電壓二極管
英文描述： 3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER
中文描述： 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD
封裝： PLASTIC PACKAGE-2
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 62K
代理商： SF30JG
D
S
24014 Rev. B-2
1 of 2
SF30AG - SF30JG
SF30AG - SF30JG
3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER
Features
DO-201AD
Min
Dim
A
B
C
D
Max
25.40
7.20
9.50
1.20
1.30
4.80
5.30
All Dimensions in mm
A
A
B
C
D
Maximum Ratings and Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Glass Passivated Die Construction
Diffused Junction
Super-Fast Switching for High Efficiency
High Current Capability and Low Forward
Voltage Drop
Surge Overload Rating to 125A Peak
Low Reverse Leakage Current
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Marking: Type Number
Weight: 1.12 grams (approx.)
Mounting Position: Any
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SF30
AG
SF30
BG
SF30
CG
SF30
DG
SF30
FG
SF30
GG
SF30
HG
SF30
JG
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Forward Voltage
V
RRM
V
RWM
V
R
V
R(RMS)
50
100
150
200
300
400
500
600
V
35
70
100
140
210
280
350
420
V
@ T
A
= 55 C
I
O
3.0
A
I
FSM
125
A
@ I
F
= 3.0A
@ T
A
= 25 C
@ T
A
= 100 C
V
FM
0.95
1.3
1.5
V
Peak Reverse Current
at Rated DC Blocking Voltage
Reverse Recovery Time (Note 3)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
I
RM
5.0
100
A
t
rr
C
j
35
40
50
50
ns
pF
K/W
C
75
R
JA
T
j,
T
STG
32
-65 to +150
Notes:
1. Valid provided that leads are maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See Figure 5.
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