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參數(shù)資料
| 型號： | SF10J41A |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA THYRISTOR SILICON PLANAR TYPE |
| 中文描述： | 東芝硅平面型晶閘管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 257K |
| 代理商： | SF10J41A |
SF10G41A,SF10J41A
2001-07-10
1
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF10G41A,SF10J41A
MEDIUM POWER CONTROL APPLICATIONS
Repetitive Peak Off
State Voltage : V
DRM
= 400,600V
Repetitive Peak Reverse Voltage
Average On
State Current
Gate Trigger Current
MAXIMUM RATINGS
: V
RRM
= 400,600V
: I
T (AV)
=
1
0A
: I
GT
=
1
5mA (Max.)
CHARACTERISTIC
SYMBOL
RATING
UNIT
SF10G41A
400
Repetitive Peak
Off
State Voltage and
Repetitive Peak
Reverse Voltage
SF10J41A
V
DRM
V
RRM
600
V
SF10G41A
500
Non
Repetitive Peak
Reverse Voltage
(Non-Repetitive<5ms,
T
j
= 0~125°C)
SF10J41A
V
RSM
720
V
Average On
State Current
(Half Sine Waveform Tc = 79°C)
I
T (AV)
10
A
R.M.S On
State Current
I
T (RMS)
16
A
160 (50Hz)
Peak One Cycle Surge On-State
Current (Non-Repetitive)
I
TSM
176 (60Hz)
A
I
2
t Limit Value
I
2
t
125
A
2
s
Critical Rate of Rise of On-State
Curret
di / dt
100
A / μs
Peak Gate Power Dissipation
P
GM
5
W
Average Gate Power Dissipation
P
G (AV)
0.5
W
Peak Forward Gate Voltage
V
FGM
10
V
Peak Reverse Gate Voltage
V
RGM
5
V
Peak Forward Gate Current
I
GM
2
A
Junction Temperature
T
j
40~125
°C
Storage Temperature Range
T
stg
40~125
°C
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 2g
TO
220AB
SC
46
13
10G1B
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