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參數(shù)資料
| 型號(hào)： | SER30KE60TXV |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 整流器 |
| 英文描述： | 30 A, 600 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED PACKAGE-1 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 37K |
| 代理商： | SER30KE60TXV |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0128B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd. * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number / Ordering Information
1/
SER30 __ 60 __
L Screening
2/
= None
TX = TX Level
TXV = TXV Level
S = S Level
L Voltage
L Configuration
KB = without lead
KE = with lead
SER30KB60 / SER30KE60
Series
30 AMP 300-600 VOLT
ULTRAFAST POWER
SURFACE MOUNT RECTIFIER
FEATURES:
Low Reverse Leakage
Low Forward Voltage Drop
Hermetically Sealed Power Surface Mount
Package
TX, TXV, and Space Level Screening
Available
2/
MAXIMUM RATINGS
Symbol
Value
Units
Peak Repetitive Reverse Voltage
and DC Blocking Voltage
SER30KE30, SER30KB30
SER30KE40, SER30KH40
SER30KE50, SER30KB50
SER30KE60, SER30KB60
VRRM
VRWM
VR
300
400
500
600
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, TA = 100
oC)
IO
30
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, Superimposed on IO, Allow Junction
to Reach Equilibrium between Pulses, TA = 25
oC)
IFSM
400
Amps
Operating and Storage Temperature
TOP & Tstg
-55 to +200
oC
Maximum Thermal Resistance
Junction to Case
RθJC
1.2
oC/W
CASE OUTLINE: KB60 Series
.315±.010
.315
±.010
.110
MAX
.275±.005
SQ.
CASE OUTLINE: KB60 Series
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SER30KB50S | 30 A, 500 V, SILICON, RECTIFIER DIODE |
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| SER30KE40TX | 30 A, 400 V, SILICON, RECTIFIER DIODE |
| SER30KB50TX | 30 A, 500 V, SILICON, RECTIFIER DIODE |
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